IXGH50N90B2 Todos los transistores

 

IXGH50N90B2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGH50N90B2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 400 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 900 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 28 nS
   Coesⓘ - Capacitancia de salida, typ: 180 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IXGH50N90B2 Datasheet (PDF)

 ..1. Size:158K  ixys
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IXGH50N90B2

Advance Technical InformationVCES = 900 VIXGH 50N90B2HiPerFASTTM IGBTIC25 = 75 AB2-Class High Speed IGBTs IXGT 50N90B2VCE(sat) = 2.7 Vtfi typ = 200 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limit

 ..2. Size:162K  ixys
ixgh50n90b2 ixgt50n90b2.pdf pdf_icon

IXGH50N90B2

Advance Technical InformationVCES = 900 VIXGH 50N90B2HiPerFASTTM IGBTIC25 = 75 AB2-Class High Speed IGBTs IXGT 50N90B2VCE(sat) = 2.7 Vtfi typ = 200 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limit

 0.1. Size:198K  ixys
ixgh50n90b2d1.pdf pdf_icon

IXGH50N90B2

IXGH 50N90B2D1 VCES = 900 VHiPerFASTTMIXGK 50N90B2D1 IC25 = 75 AIGBT with FastIXGX 50N90B2D1 VCE(sat) = 2.7 VDiodetfi typ = 200 nsB2-Class High Speed IGBTwith Fast DiodePreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGCVGEM Transien

 0.2. Size:203K  ixys
ixgh50n90b2d1 ixgk50n90b2d1 ixgx50n90b2d1.pdf pdf_icon

IXGH50N90B2

IXGH 50N90B2D1 VCES = 900 VHiPerFASTTMIXGK 50N90B2D1 IC25 = 75 AIGBT with FastIXGX 50N90B2D1 VCE(sat) = 2.7 VDiodetfi typ = 200 nsB2-Class High Speed IGBTwith Fast DiodePreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGCVGEM Transien

Otros transistores... IXGH4N250C , IXGH50N120C3 , IXGH50N60B2 , IXGH50N60B4 , IXGH50N60B4D1 , IXGH50N60C2 , IXGH50N60C4 , IXGH50N60C4D1 , TGAN20N135FD , IXGH50N90B2D1 , IXGH56N60A3 , IXGH56N60B3 , IXGH56N60B3D1 , IXGH60N30C3 , IXGH60N60B2 , IXGH60N60C2 , IXGH60N60C3 .

History: IXGH25N160 | CM75RL-12NF | RJH1CM5DPQ-E0 | IXGT30N60C3D1 | CM75TX-24S | DM2G75SH6A | APTGT50X170BTP3

 

 
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