IXGH56N60B3
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGH56N60B3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 330
W
|Vce|ⓘ - Tensión máxima colector-emisor: 600
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 130
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.49
V @25℃
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 41
nS
Coesⓘ - Capacitancia de salida, typ: 220
pF
Paquete / Cubierta:
TO247
- Selección de transistores por parámetros
IXGH56N60B3
Datasheet (PDF)
..1. Size:179K ixys
ixgh56n60b3.pdf 
Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH56N60B3IC110 = 56AVCE(sat) 1.80VMedium-Speed Low Vsat PTIGBT 5 - 40 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VGCDES (TAB)VGES Continuous 20 VVGEM Transient 30 VG = Gate C = Collecto
0.1. Size:199K ixys
ixgh56n60b3d1.pdf
VCES = 600VGenX3TM 600V IGBTIXGH56N60B3D1IC110 = 56AVCE(sat) 1.8VMedium speed low Vsat PTIGBTs 5-40 kHz switchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGIC110 TC = 110C 56 AC (TAB)EICM TC = 25C, 1ms 350 A
5.1. Size:175K ixys
ixgh56n60a3.pdf
Advance Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH56N60A3IC110 = 56AVCE(sat) 1.35VUltra-Low Vsat PT IGBT for up to5 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VGCDES (TAB)VGES Continuous 20 VVGEM Transient 30 VG = Gate C = Collector
9.1. Size:64K ixys
ixgh50n60a.pdf
IXGH50N60A VCES = 600 VHiPerFASTTM IGBTIXGH50N60ASIC25 = 75 ASurface MountableVCE(sat) = 2.7 Vtfi = 275 nsTO-247 SMDSymbol Test Conditions Maximum Ratings (50N60AS)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)GVGES Continuous 20 VEVGEM Transient 30 VIC25 TC = 25C75 ATO-247 ADIC90 TC = 90C50 A(50N60A)ICM TC = 2
9.2. Size:158K ixys
ixgh50n90b2.pdf
Advance Technical InformationVCES = 900 VIXGH 50N90B2HiPerFASTTM IGBTIC25 = 75 AB2-Class High Speed IGBTs IXGT 50N90B2VCE(sat) = 2.7 Vtfi typ = 200 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limit
9.3. Size:196K ixys
ixgh50n60c4d1.pdf
VCES = 600VHigh-Gain IGBTs IXGQ50N60C4D1IC110 = 46Aw/ Diode IXGH50N60C4D1 VCE(sat) 2.3V High-Speed PT Trench IGBTsTO-3P (IXGQ)GCESymbol Test Conditions Maximum RatingsTabVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VTO-247 (IXGH)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 90 AIC110 TC = 110
9.4. Size:218K ixys
ixgh50n60b4.pdf
VCES = 600VHigh-Gain IGBTs IXGA50N60B4IC110 = 50AIXGP50N60B4 VCE(sat) 1.8V IXGH50N60B4Low-Vsat PT Trench IGBT TO-263 AA (IXGA)GEC (Tab)TO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VC C (Tab)EIC25 TC = 25C 1
9.5. Size:216K ixys
ixgh50n60c4.pdf
VCES = 600VHigh-Gain IGBTs IXGA50N60C4IC110 = 46AIXGP50N60C4 VCE(sat) 2.3V IXGH50N60C4High-Speed PT Trench IGBT TO-263 AA (IXGA)GEC (Tab)TO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VC C (Tab)EIC25 TC = 25C
9.6. Size:162K ixys
ixgh50n90b2 ixgt50n90b2.pdf
Advance Technical InformationVCES = 900 VIXGH 50N90B2HiPerFASTTM IGBTIC25 = 75 AB2-Class High Speed IGBTs IXGT 50N90B2VCE(sat) = 2.7 Vtfi typ = 200 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limit
9.7. Size:169K ixys
ixgh50n120c3.pdf
Preliminary Technical InformationTMVCES = 1200VGenX3 1200V IGBT IXGH50N120C3IC110 = 50AVCE(sat) 4.2VHigh speed PT IGBTstfi(typ) = 64nsfor 20 - 50 kHz switchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 V GTABCVGEM Transient 30 V EIC
9.8. Size:198K ixys
ixgh50n90b2d1.pdf
IXGH 50N90B2D1 VCES = 900 VHiPerFASTTMIXGK 50N90B2D1 IC25 = 75 AIGBT with FastIXGX 50N90B2D1 VCE(sat) = 2.7 VDiodetfi typ = 200 nsB2-Class High Speed IGBTwith Fast DiodePreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGCVGEM Transien
9.9. Size:585K ixys
ixgh50n60b2 ixgt50n60b2.pdf
VCES = 600 VIXGH 50N60B2HiPerFASTTM IGBTIC25 = 75 AB2-Class High Speed IGBTs IXGT 50N60B2VCE(sat) = 2.0 Vtfi typ = 65 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by leads) 75 A (IXGT)IC11
9.10. Size:181K ixys
ixgh50n60b.pdf
IXGH 50N60BHiPerFASTTM IGBT VCES = 600 VIXGK 50N60BIC25 = 75 AIXGT 50N60BVCE(sat) = 2.3 VIXGJ 50N60Btfi(typ) = 120 nsTO-247 AD (IXGH)C C (TAB)Symbol Test Conditions Maximum Ratings EVCES TJ = 25C to 150C 600 VTO-268 (D3) ( IXGT)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)EIC25 TC = 25C75 ATO-268 Le
9.11. Size:203K ixys
ixgh50n90b2d1 ixgk50n90b2d1 ixgx50n90b2d1.pdf
IXGH 50N90B2D1 VCES = 900 VHiPerFASTTMIXGK 50N90B2D1 IC25 = 75 AIGBT with FastIXGX 50N90B2D1 VCE(sat) = 2.7 VDiodetfi typ = 200 nsB2-Class High Speed IGBTwith Fast DiodePreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGCVGEM Transien
9.12. Size:584K ixys
ixgh50n60c2.pdf
Advance Technical DataVCES = 600 VIXGH 50N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 50N60C2VCE(sat) = 2.7 Vtfi typ = 48 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by
9.13. Size:198K ixys
ixgh50n60b4d1.pdf
VCES = 600VHigh-Gain IGBTs IXGH50N60B4D1IC110 = 50Aw/Diode IXGQ50N60B4D1 VCE(sat) 1.8V Low-Vsat PT Trench IGBTsTO-247 (IXGH)GC TabESymbol Test Conditions Maximum RatingsTO-3P (IXGQ)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VCEIC25 TC = 25C 100 ATabIC
9.14. Size:583K ixys
ixgh50n60b2.pdf
VCES = 600 VIXGH 50N60B2HiPerFASTTM IGBTIC25 = 75 AB2-Class High Speed IGBTs IXGT 50N60B2VCE(sat) = 2.0 Vtfi typ = 65 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by leads) 75 A (IXGT)IC11
9.15. Size:586K ixys
ixgh50n60c2 ixgt50n60c2.pdf
Advance Technical DataVCES = 600 VIXGH 50N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 50N60C2VCE(sat) = 2.7 Vtfi typ = 48 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by
9.16. Size:64K ixys
ixgh50n60as.pdf
IXGH50N60A VCES = 600 VHiPerFASTTM IGBTIXGH50N60ASIC25 = 75 ASurface MountableVCE(sat) = 2.7 Vtfi = 275 nsTO-247 SMDSymbol Test Conditions Maximum Ratings (50N60AS)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)GVGES Continuous 20 VEVGEM Transient 30 VIC25 TC = 25C75 ATO-247 ADIC90 TC = 90C50 A(50N60A)ICM TC = 2
Otros transistores... IXGH50N60B4
, IXGH50N60B4D1
, IXGH50N60C2
, IXGH50N60C4
, IXGH50N60C4D1
, IXGH50N90B2
, IXGH50N90B2D1
, IXGH56N60A3
, CRG40T60AK3HD
, IXGH56N60B3D1
, IXGH60N30C3
, IXGH60N60B2
, IXGH60N60C2
, IXGH60N60C3
, IXGH60N60C3D1
, IXGH64N60A3
, IXGH64N60B3
.
History: 2PG006
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