IXGH60N60C2 Todos los transistores

 

IXGH60N60C2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGH60N60C2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 480 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 25 nS
   Coesⓘ - Capacitancia de salida, typ: 280 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IXGH60N60C2 Datasheet (PDF)

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IXGH60N60C2

Advance Technical DataVCES = 600 VIXGH 60N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 60N60C2VCE(sat) = 2.5 Vtfi typ = 35 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by

 ..2. Size:581K  ixys
 ixgh60n60c2.pdf pdf_icon

IXGH60N60C2

Advance Technical DataVCES = 600 VIXGH 60N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 60N60C2VCE(sat) = 2.5 Vtfi typ = 35 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by

 4.1. Size:163K  ixys
 ixgh60n60c3.pdf pdf_icon

IXGH60N60C2

GenX3TM 600V VCES = 600VIXGH60N60C3IGBT IC110 = 60A VCE(sat) 2.5V tfi (typ) = 50nsHigh Speed PT IGBT for40-100kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM Transient 30 VIC25 TC = 25C (Limited by Leads) 75 AG

 4.2. Size:284K  ixys
 ixgh60n60c3d1 ixgt60n60c3d1.pdf pdf_icon

IXGH60N60C2

VCES = 600VGenX3TM 600V IGBTs IXGH60N60C3D1 IC110 = 60Awith Diode IXGT60N60C3D1**Obsolete Part Number VCE(sat) 2.5V tfi (typ) = 50nsHigh Speed PT IGBTs for40-100kHz switchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VCC (Tab)EVGES Continuous 20 VVGE

MOSTRAR MÁS

Otros transistores... IXGH50N60C4D1 , IXGH50N90B2 , IXGH50N90B2D1 , IXGH56N60A3 , IXGH56N60B3 , IXGH56N60B3D1 , IXGH60N30C3 , IXGH60N60B2 , TGPF30N43P , IXGH60N60C3 , IXGH60N60C3D1 , IXGH64N60A3 , IXGH64N60B3 , IXGH6N170 , IXGH6N170A , IXGH72N60A3 , IXGH72N60B3 .

History: CM150RL-24NF | APT20GT60KR | AOK20B120D1 | IRGP4650DPBF | BM63364S-VC | 6MBI50VW-120-50

 

 
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