IXGK120N60C2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGK120N60C2

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 830 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃

trⓘ - Tiempo de subida, typ: 25 nS

Coesⓘ - Capacitancia de salida, typ: 680 pF

Encapsulados: TO246

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IXGK120N60C2 datasheet

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ixgk120n60c2.pdf pdf_icon

IXGK120N60C2

Preliminary Technical Information VCES = 600V HiPerFASTTM IGBT IXGK120N60C2 Lightspeed 2TM Series IC110 = 120A IXGX120N60C2 VCE(sat) 2.5V tfi(typ) = 80ns TO-264(IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous 20 V C (TAB) E VGEM Transient 30 V IC25 TC = 25

 ..2. Size:925K  ixys
ixgk120n60c2 ixgx120n60c2.pdf pdf_icon

IXGK120N60C2

ADVANCE TECHNICAL INFORMATION VCES = 600 V HiPerFASTTM IGBT IXGK 120N60C2 IC110 = 120 A Lightspeed 2TM Series IXGX 120N60C2 VCE(sat) = 2.5 V tfi(typ) = 45 ns Symbol Test Conditions Maximum Ratings TO-264(IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) E IC25 TC = 25 C (limited by leads)

 4.1. Size:197K  ixys
ixgk120n60b3-ixgx120n60b3.pdf pdf_icon

IXGK120N60C2

VCES = 600V GenX3TM 600V IXGK120N60B3 IC110 = 120A IXGX120N60B3 IGBTs VCE(sat) 1.8V tfi(typ) = 145ns Medium-Speed-Low-Vsat PT IGBTs for 5-40kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V Tab VGES Continuous 20 V VGEM Transient 30 V PLUS247TM (IXG

 4.2. Size:211K  ixys
ixgk120n60a3.pdf pdf_icon

IXGK120N60C2

GenX3TM A3-Class IXGK120N60A3 VCES = 600V IXGX120N60A3 IC110 = 120A IGBTS VCE(sat) 1.35V Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G (TAB) C VGES Continuous 20 V E E VGEM Transient 30 V IC25 TC = 25 C 200 A PLUS 2

Otros transistores... IXGJ40N60C2D1, IXGJ50N60B, IXGJ50N60C4D1, IXGK100N170, IXGK120N120A3, IXGK120N120B3, IXGK120N60A3, IXGK120N60B3, CRG75T65AK5HD, IXGK28N140B3H1, IXGK320N60A3, IXGK320N60B3, IXGK35N120B, IXGK35N120BD1, IXGK35N120C, IXGK35N120CD1, IXGK400N30A3