IXGK320N60A3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGK320N60A3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1000 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 320 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.05 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 68 nS
Coesⓘ - Capacitancia de salida, typ: 985 pF
Qgⓘ - Carga total de la puerta, typ: 560 nC
Paquete / Cubierta: TO264
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IXGK320N60A3 Datasheet (PDF)
ixgk320n60a3.pdf
GenX3TM 600V IGBTs VCES = 600VIXGK320N60A3IC25 = 320AIXGX320N60A3VCE(sat) 1.25VUltra-Low Vsat PT IGBTs forup to 5kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VCTabEEVGES Continuous 20 VVGEM Transient 30 VPLUS247TM (IXGX)IC25 TC = 25C (C
ixgk320n60b3.pdf
Preliminary Technical InformationGenX3TM 600V VCES = 600VIXGK320N60B3IC90 = 320AIGBTsIXGX320N60B3VCE(sat) 1.6VMedium-Speed Low-Vsat PTIGBTs for 5-40 kHz SwitchingTO-264 (IXGK)GSymbol Test Conditions Maximum RatingsCEVCES TJ = 25C to 150C 600 VTabVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VPLUS247 (IXGX)VGEM T
ixgk35n120b.pdf
Preliminary Data SheetIXGK 35N120B VCES = 1200 VHiPerFASTTM IGBTIXGX 35N120B IC25 = 70 AIXGK 35N120BD1 VCE(sat) = 3.3 VIXGX 35N120BD1 tfi(typ) = 160 ns(D1)Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCC (TAB)VGEM Transient 30 VEIC25 TC = 25C70 AIC9
ixgk35n120c.pdf
Preliminary Data SheetIXGK 35N120C VCES = 1200 VHiPerFASTTM IGBTIXGX 35N120C IC25 = 70 AIXGK 35N120CD1 VCE(sat) = 4.0 VIXGX 35N120CD1 tfi(typ) = 115 ns(D1)Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCC (TAB)VGEM Transient 30 VEIC25 TC = 25C70 AIC9
ixgk35n120b ixgk35n120bd1 ixgx35n120b ixgx35n120bd1.pdf
Preliminary Data SheetIXGK 35N120B VCES = 1200 VHiPerFASTTM IGBTIXGX 35N120B IC25 = 70 AIXGK 35N120BD1 VCE(sat) = 3.3 VIXGX 35N120BD1 tfi(typ) = 160 ns(D1)Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCC (TAB)VGEM Transient 30 VEIC25 TC = 25C70 AIC9
ixgk35n120bd1.pdf
Preliminary Data SheetIXGK 35N120B VCES = 1200 VHiPerFASTTM IGBTIXGX 35N120B IC25 = 70 AIXGK 35N120BD1 VCE(sat) = 3.3 VIXGX 35N120BD1 tfi(typ) = 160 ns(D1)Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCC (TAB)VGEM Transient 30 VEIC25 TC = 25C70 AIC9
ixgk35n120cd1.pdf
Preliminary Data SheetIXGK 35N120C VCES = 1200 VHiPerFASTTM IGBTIXGX 35N120C IC25 = 70 AIXGK 35N120CD1 VCE(sat) = 4.0 VIXGX 35N120CD1 tfi(typ) = 115 ns(D1)Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCC (TAB)VGEM Transient 30 VEIC25 TC = 25C70 AIC9
Otros transistores... IXGJ50N60C4D1 , IXGK100N170 , IXGK120N120A3 , IXGK120N120B3 , IXGK120N60A3 , IXGK120N60B3 , IXGK120N60C2 , IXGK28N140B3H1 , IRGB20B60PD1 , IXGK320N60B3 , IXGK35N120B , IXGK35N120BD1 , IXGK35N120C , IXGK35N120CD1 , IXGK400N30A3 , IXGK50N120C3H1 , IXGK50N60A2D1 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2