VBGT15N135 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VBGT15N135
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1350 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 60 pF
Encapsulados: TO3PN
Búsqueda de reemplazo de VBGT15N135 IGBT
- Selección ⓘ de transistores por parámetros
VBGT15N135 datasheet
vbgt15n135.pdf
VBGT15N135 www.VBsemi.com General Description VBsemi IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. _ + _ + _ + _ + FEATURES _ + High speed switching _ + _ + High system efficiency _ + _ + Soft current turn-off waveforms _ + _ Extreme
vbgt15n120p.pdf
VBGT15N120P www.VBsemi.com General Description VBsemi IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High system efficiency Soft current turn-off waveforms Extremely enhanced avalanche capability MAXIMUM RATING (Ta=25 )
vbgt15n120.pdf
VBGT15N120 www.VBsemi.com General Description VBsemi Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High ruggedness, temperature stable behavior Soft current turn-off waveforms Extremely enhanced avalanc
Otros transistores... CT75AM-12 , CY20AAJ-8 , CY25AAJ-8 , VBGN40N120 , VBGN40N60 , VBGN50N60 , VBGT15N120 , VBGT15N120P , CRG40T60AK3HD , VBGT25N135 , VBGT30N135 , DG10X06T1 , DG10X12T2 , DG120X07T2 , DG15X06T1 , DG15X12T2 , DG20X06T2 .
History: IXGH30N60BU1
History: IXGH30N60BU1
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
irfp4668 | mpsa56 | c3205 transistor | tip35c datasheet | 2n5401 datasheet | mj21194g | irfz34n | mn2488



