IXGP12N120A2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGP12N120A2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 75 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 24 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.4 V @25℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 30 pF
Encapsulados: TO220
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IXGP12N120A2 datasheet
ixgp12n120a2.pdf
IXGA 12N120A2 VCES = 1200 V IGBT IXGP 12N120A2 IC25 = 24 A Optimized for VCE(sat) = 3.0 V switching up to 5KHz Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V TO-220AB (IXGP) VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C24 A IC90 TC = 90 C12 A ICM TC = 25 C, 1
ixga12n120a2 ixgp12n120a2.pdf
IXGA 12N120A2 VCES = 1200 V IGBT IXGP 12N120A2 IC25 = 24 A Optimized for VCE(sat) = 3.0 V switching up to 5KHz Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V TO-220AB (IXGP) VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C24 A IC90 TC = 90 C12 A ICM TC = 25 C, 1
ixga12n120a3 ixgp12n120a3 ixgh12n120a3.pdf
GenX3TM 1200V VCES = 1200V IXGA12N120A3 IGBTs IC90 = 12A IXGP12N120A3 VCE(sat) 3.0V IXGH12N120A3 High Surge Current TO-263 AA (IXGA) Ultra-Low Vsat PT IGBTs for up to 3kHz Switching G S D (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V G
ixgp12n120a3.pdf
GenX3TM 1200V VCES = 1200V IXGA12N120A3 IGBTs IC90 = 12A IXGP12N120A3 VCE(sat) 3.0V IXGH12N120A3 High Surge Current TO-263 AA (IXGA) Ultra-Low Vsat PT IGBTs for up to 3kHz Switching G S D (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V G
Otros transistores... IXGN400N60B3, IXGN50N120C3H1, IXGN60N60C2, IXGN60N60C2D1, IXGN72N60A3, IXGN72N60C3H1, IXGN82N120B3H1, IXGN82N120C3H1, FGA60N65SMD, IXGP12N120A3, IXGP12N60B, IXGP14N120B, IXGP15N120B2, IXGP15N120C, IXGP16N60B2, IXGP16N60B2D1, IXGP16N60C2
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