IXGP20N120B3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGP20N120B3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 180 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 36 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 31 nS
Coesⓘ - Capacitancia de salida, typ: 80 pF
Qgⓘ - Carga total de la puerta, typ: 51 nC
Paquete / Cubierta: TO220
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IXGP20N120B3 Datasheet (PDF)
ixga20n120b3 ixgp20n120b3.pdf
Preliminary Technical InformationVCES = 1200VGenX3TM 1200V IGBTIXGA20N120B3IC90 = 20AIXGP20N120B3VCE(sat) 3.1VHigh Speed Low Vsat PTIGBTs 3-20 kHz SwitchingTO-263 (IXGA)GSymbol Test Conditions Maximum RatingsEC (TAB)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VTO-220 (IXGP)VGES Continuous 20 VVGEM Trans
ixgp20n120b3.pdf
Preliminary Technical InformationVCES = 1200VGenX3TM 1200V IGBTIXGA20N120B3IC90 = 20AIXGP20N120B3VCE(sat) 3.1VHigh Speed Low Vsat PTIGBTs 3-20 kHz SwitchingTO-263 (IXGA)GSymbol Test Conditions Maximum RatingsEC (TAB)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VTO-220 (IXGP)VGES Continuous 20 VVGEM Trans
ixga20n120a3 ixgh20n120a3 ixgp20n120a3.pdf
VCES = 1200VGenX3TM 1200V IGBTs IXGA20N120A3IC110 = 20AIXGP20N120A3VCE(sat) 2.5VIXGH20N120A3 Ultra-Low Vsat PT IGBTs forup to 3 kHz SwitchingTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VG
ixgp20n120a3.pdf
VCES = 1200VGenX3TM 1200V IGBTs IXGA20N120A3IC110 = 20AIXGP20N120A3VCE(sat) 2.5VIXGH20N120A3 Ultra-Low Vsat PT IGBTs forup to 3 kHz SwitchingTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VG
ixgp20n120.pdf
VCES = 1200 VIXGA 20N120IGBTIC25 = 40 AIXGP 20N120VCE(sat) = 2.5 Vtfi(typ) = 380 nsSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCEVGEM Transient 30 VIC25 TC = 25C40 AIC90 TC = 90C20 ATO-263 AA (IXGA)ICM TC = 25C, 1 ms 80 ASSOA VGE = 15 V, T
ixga20n120 ixgp20n120.pdf
VCES = 1200 VIXGA 20N120IGBTIC25 = 40 AIXGP 20N120VCE(sat) = 2.5 Vtfi(typ) = 380 nsSymbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGCEVGEM Transient 30 VIC25 TC = 25C40 AIC90 TC = 90C20 ATO-263 AA (IXGA)ICM TC = 25C, 1 ms 80 ASSOA VGE = 15 V, T
Otros transistores... IXGP15N120C , IXGP16N60B2 , IXGP16N60B2D1 , IXGP16N60C2 , IXGP16N60C2D1 , IXGP20N100A3 , IXGP20N120 , IXGP20N120A3 , IRG7R313U , IXGP24N120C3 , IXGP24N60C , IXGP24N60C4 , IXGP24N60C4D1 , IXGP2N100 , IXGP2N100A , IXGP30N120B3 , IXGP30N60B2 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2