IXGP2N100A IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGP2N100A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 25 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1000 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 4 A
Tjⓘ -
Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 3.5(max) V @25℃
trⓘ - Tiempo de subida, typ: 20 nS
Coesⓘ - Capacitancia de salida, typ: 12 pF
Encapsulados: TO220
Búsqueda de reemplazo de IXGP2N100A IGBT
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IXGP2N100A datasheet
..1. Size:83K ixys
ixgp2n100a.pdf 
VCES IC90 VCE(SAT) High Voltage IGBT IXGP 2N100 1000 V 2.0 A 2.7 V IXGP 2N100A 1000 V 2.0 A 3.5 V Symbol Test Conditions Maximum Ratings TO-220 VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V VGES Continuous 20 V VGEM Transient 30 V 1 4 IC25 TC = 25 C 4 A 2 3 IC90 TC = 90 C 2 A ICM TC = 25 C, 1 ms 8 A 1 = Gate 2 = Collector 3 = Emitter 4 =
5.1. Size:83K ixys
ixgp2n100.pdf
VCES IC90 VCE(SAT) High Voltage IGBT IXGP 2N100 1000 V 2.0 A 2.7 V IXGP 2N100A 1000 V 2.0 A 3.5 V Symbol Test Conditions Maximum Ratings TO-220 VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1000 V VGES Continuous 20 V VGEM Transient 30 V 1 4 IC25 TC = 25 C 4 A 2 3 IC90 TC = 90 C 2 A ICM TC = 25 C, 1 ms 8 A 1 = Gate 2 = Collector 3 = Emitter 4 =
9.1. Size:98K ixys
ixgp24n60c.pdf
HiPerFASTTM IGBT IXGA 24N60C VCES = 600 V IXGP 24N60C IC25 = 48 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 60 ns Symbol Test Conditions Maximum Ratings TO-220 AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C48 A IC110 TC = 110 C24 A TO-263 AA (IXGA) ICM TC
9.2. Size:92K ixys
ixgp24n60c4.pdf
Advance Technical Information High-Gain IGBTs VCES = 600V IXGP24N60C4 IC110 = 24A IXGH24N60C4 VCE(sat) 2.70V tfi(typ) = 68ns High-Speed PT Trench IGBTs TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G C Tab VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD (IX
9.3. Size:77K ixys
ixgp20n60b.pdf
IXGA 20N60B VCES = 600 V HiPerFASTTM IGBT IXGP 20N60B IC25 = 40 A VCE(sat)typ = 1.7 V tfi = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25 C 40 A IC90 TC = 90 C 20 A TO-263 AA (IXGA) ICM TC = 25 C,
9.4. Size:220K ixys
ixgp20n100a3.pdf
Advance Technical Information VCES = 1000V GenX3TM 1000V IXGA20N100A3 IC90 = 20A IGBTs IXGP20N100A3 VCE(sat) 2.3V IXGH20N100A3 Ultra-Low Vsat PT IGBTs for up to 3kHz Switching TO-263 (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXGP) VCES TJ = 25 C to 150 C 1000 V VCGR TJ = 25 C to 150 C, RGE = 1M 1000 V VGES Continuous 20 V
9.5. Size:236K ixys
ixga20n120a3 ixgh20n120a3 ixgp20n120a3.pdf
VCES = 1200V GenX3TM 1200V IGBTs IXGA20N120A3 IC110 = 20A IXGP20N120A3 VCE(sat) 2.5V IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G
9.6. Size:234K ixys
ixgp20n120a3.pdf
VCES = 1200V GenX3TM 1200V IGBTs IXGA20N120A3 IC110 = 20A IXGP20N120A3 VCE(sat) 2.5V IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V VGEM Transient 30 V G
9.7. Size:69K ixys
ixgp20n120.pdf
VCES = 1200 V IXGA 20N120 IGBT IC25 = 40 A IXGP 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C E VGEM Transient 30 V IC25 TC = 25 C40 A IC90 TC = 90 C20 A TO-263 AA (IXGA) ICM TC = 25 C, 1 ms 80 A SSOA VGE = 15 V, T
9.8. Size:111K ixys
ixga20n100 ixgp20n100.pdf
VCES = 1000 V IXGA 20N100 IGBT IC25 = 40 A IXGP 20N100 VCE(sat) = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1000 V TO-220AB (IXGP) VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C40 A IC90 TC = 90 C20 A ICM TC = 25 C, 1 ms 80 A TO-263 AA (IXGA) SSOA VGE = 15
9.9. Size:212K ixys
ixga20n120b3 ixgp20n120b3.pdf
Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGA20N120B3 IC90 = 20A IXGP20N120B3 VCE(sat) 3.1V High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings E C (TAB) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V TO-220 (IXGP) VGES Continuous 20 V VGEM Trans
9.10. Size:100K ixys
ixga24n60c ixgp24n60c.pdf
HiPerFASTTM IGBT IXGA 24N60C VCES = 600 V IXGP 24N60C IC25 = 48 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 60 ns Symbol Test Conditions Maximum Ratings TO-220 AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C48 A IC110 TC = 110 C24 A TO-263 AA (IXGA) ICM TC
9.11. Size:210K ixys
ixgp20n120b3.pdf
Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGA20N120B3 IC90 = 20A IXGP20N120B3 VCE(sat) 3.1V High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings E C (TAB) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V TO-220 (IXGP) VGES Continuous 20 V VGEM Trans
9.12. Size:84K ixys
ixgp24n60c4d1.pdf
Preliminary Technical Information VCES = 600V High-Gain IGBT IXGP24N60C4D1 IC110 = 24A w/ Diode VCE(sat) 2.70V tfi(typ) = 44ns High-Speed PT Trench IGBT TO-220 Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C Tab E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector
9.13. Size:110K ixys
ixgp20n100.pdf
VCES = 1000 V IXGA 20N100 IGBT IC25 = 40 A IXGP 20N100 VCE(sat) = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1000 V TO-220AB (IXGP) VCGR TJ = 25 C to 150 C; RGE = 1 M 1000 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C40 A IC90 TC = 90 C20 A ICM TC = 25 C, 1 ms 80 A TO-263 AA (IXGA) SSOA VGE = 15
9.14. Size:71K ixys
ixga20n120 ixgp20n120.pdf
VCES = 1200 V IXGA 20N120 IGBT IC25 = 40 A IXGP 20N120 VCE(sat) = 2.5 V tfi(typ) = 380 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G C E VGEM Transient 30 V IC25 TC = 25 C40 A IC90 TC = 90 C20 A TO-263 AA (IXGA) ICM TC = 25 C, 1 ms 80 A SSOA VGE = 15 V, T
9.15. Size:188K ixys
ixgp24n120c3.pdf
Preliminary Technical Information VCES = 1200V GenX3TM 1200V IGBT IXGA24N120C3 IC25 = 48A IXGH24N120C3 VCE(sat) 4.2V IXGP24N120C3 High speed PT IGBTs for tfi(typ) = 110ns 10-50kHz Switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V G E VGES Continuous 20 V C (TAB) V
Otros transistores... IXGP20N120, IXGP20N120A3, IXGP20N120B3, IXGP24N120C3, IXGP24N60C, IXGP24N60C4, IXGP24N60C4D1, IXGP2N100, YGW60N65F1A1, IXGP30N120B3, IXGP30N60B2, IXGP30N60B4D1, IXGP30N60C2, IXGP30N60C3, IXGP30N60C3C1, IXGP30N60C3D4, IXGP36N60A3
