IXGP2N100A Todos los transistores

 

IXGP2N100A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGP2N100A
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 25 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1000 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 4 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.5(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 20 nS
   Coesⓘ - Capacitancia de salida, typ: 12 pF
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

IXGP2N100A Datasheet (PDF)

 ..1. Size:83K  ixys
ixgp2n100a.pdf pdf_icon

IXGP2N100A

VCES IC90 VCE(SAT)High Voltage IGBTIXGP 2N100 1000 V 2.0 A 2.7 VIXGP 2N100A 1000 V 2.0 A 3.5 VSymbol Test Conditions Maximum RatingsTO-220VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VVGEM Transient 30 V14IC25 TC = 25C 4 A23IC90 TC = 90C 2 AICM TC = 25C, 1 ms 8 A1 = Gate 2 = Collector3 = Emitter 4 =

 5.1. Size:83K  ixys
ixgp2n100.pdf pdf_icon

IXGP2N100A

VCES IC90 VCE(SAT)High Voltage IGBTIXGP 2N100 1000 V 2.0 A 2.7 VIXGP 2N100A 1000 V 2.0 A 3.5 VSymbol Test Conditions Maximum RatingsTO-220VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 MW 1000 VVGES Continuous 20 VVGEM Transient 30 V14IC25 TC = 25C 4 A23IC90 TC = 90C 2 AICM TC = 25C, 1 ms 8 A1 = Gate 2 = Collector3 = Emitter 4 =

 9.1. Size:98K  ixys
ixgp24n60c.pdf pdf_icon

IXGP2N100A

HiPerFASTTM IGBTIXGA 24N60C VCES = 600 VIXGP 24N60C IC25 = 48 ALightspeedTM SeriesVCE(sat)typ = 2.1 Vtfi typ = 60 nsSymbol Test Conditions Maximum Ratings TO-220 AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 V EIC25 TC = 25C48 AIC110 TC = 110C24 ATO-263 AA (IXGA)ICM TC

 9.2. Size:92K  ixys
ixgp24n60c4.pdf pdf_icon

IXGP2N100A

Advance Technical InformationHigh-Gain IGBTs VCES = 600VIXGP24N60C4IC110 = 24AIXGH24N60C4 VCE(sat) 2.70V tfi(typ) = 68nsHigh-Speed PT Trench IGBTsTO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGCTabVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 VTO-247 AD (IX

Otros transistores... IXGP20N120 , IXGP20N120A3 , IXGP20N120B3 , IXGP24N120C3 , IXGP24N60C , IXGP24N60C4 , IXGP24N60C4D1 , IXGP2N100 , RJH3047 , IXGP30N120B3 , IXGP30N60B2 , IXGP30N60B4D1 , IXGP30N60C2 , IXGP30N60C3 , IXGP30N60C3C1 , IXGP30N60C3D4 , IXGP36N60A3 .

History: MMG75WD120XB6T4N | DAHF100G120SA | MMG400D120UA6TC

 

 
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