IXGP30N120B3 Todos los transistores

 ..1. Size:209K  ixys
 ixgp30n120b3.pdf

VCES = 1200V GenX3TM 1200V IXGA30N120B3 IC110 = 30A IGBTs IXGP30N120B3 VCE(sat) 3.5V IXGH30N120B3 tfi(typ) = 204ns High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V TO-220 (IXGP) VGES Continuous 20 V VGEM Tra

 7.1. Size:85K  ixys
 ixgp30n60b4d1.pdf

Preliminary Technical Information VCES = 600V High-Gain IGBT IXGP30N60B4D1 IC110 = 30A w/ Diode VCE(sat) 1.7V tfi(typ) = 88ns High-Speed PT Trench IGBT TO-220 Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C Tab E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector

 7.2. Size:269K  ixys
 ixgp30n60c3.pdf

GenX3TM 600V VCES = 600V IXGA30N60C3 IGBTs IC110 = 30A IXGP30N60C3 VCE(sat) 3.0V IXGH30N60C3 tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V

 7.3. Size:546K  ixys
 ixgp30n60b2.pdf

Advance Technical Data VCES = 600 V IXGP 30N60B2 HiPerFASTTM IGBT IC25 = 70 A VCE(sat)

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 ixgp30n60c3d4.pdf

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3D4 w/ Diode IC110 = 30A IXGP30N60C3D4 VCE(sat) 3.0V tfi(typ) = 47ns High-Speed PT IGBTs for 40-100kHz Switching TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TC = 25 C to 150 C 600 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V TO-220AB (IXGP) VGES Continuous 20 V

 7.5. Size:551K  ixys
 ixgp30n60c2.pdf

VCES = 600 V IXGP 30N60C2 HiPerFASTTM IGBT IC25 = 70 A C2- Class High Speed IGBTs VCE(sat) = 2.7 V tfi typ = 32 ns Symbol Test Conditions Maximum Ratings TO-220 (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V C (TAB) VGEM Transient 30 V G C E IC25 TC = 25 C (limited by leads) 70 A IC110 TC = 110 C30 A G = Gate, C =

 7.6. Size:278K  ixys
 ixgp30n60c3c1.pdf

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3C1 w/ SiC Anti-Parallel IC110 = 30A IXGP30N60C3C1 Diode VCE(sat) 3.0V IXGH30N60C3C1 tfi(typ) = 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RG