IXGP48N60A3 Todos los transistores

 

IXGP48N60A3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGP48N60A3
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.18 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Coesⓘ - Capacitancia de salida, typ: 175 pF
   Paquete / Cubierta: TO220
 

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IXGP48N60A3 PDF specs

 ..1. Size:234K  ixys
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IXGP48N60A3

IXGA48N60A3 VCES = 600V GenX3TM 600V IXGP48N60A3 IGBTs IC110 = 48A IXGH48N60A3 VCE(sat) 1.35V Ultra Low Vsat PT IGBTs for TO-263 (IXGA) up to 5kHz switching G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25 C to 150 C 600 V TO-220 (IXGP) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G IC25 TC =... See More ⇒

 5.1. Size:223K  ixys
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IXGP48N60A3

IXGA48N60C3 VCES = 600V GenX3TM 600V IGBT IXGH48N60C3 IC110 = 48A IXGP48N60C3 VCE(sat) 2.5V High Speed PT IGBTs for tfi(typ) = 38ns 40-100kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25 C to 150 C 600 V E (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V TO-247 (IXGH) VGES Continuous 20 V VGEM Transient 30 V I... See More ⇒

 5.2. Size:221K  ixys
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IXGP48N60A3

IXGA48N60B3 VCES = 600V GenX3TM 600V IGBT IXGP48N60B3 IC110 = 48A IXGH48N60B3 VCE(sat) 1.8V Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TC = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V TO-220 (IXGP) VGES Continuous 20 V VGEM Transient 30 V IC110 TC = 1... See More ⇒

 5.3. Size:240K  ixys
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IXGP48N60A3

GenX3TM 600V IGBTs IXGI48N60C3 VCES = 600V IXGA48N60C3 IC110 = 48A IXGP48N60C3 2.5V High-Speed PT IGBTs for VCE(sat) 40-100kHz Switching IXGH48N60C3 tfi(typ) = 38ns Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V Features VGES Continuous 20 V Optimized for Low Switching Losses VGEM Tra... See More ⇒

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Otros transistores... IXGP30N60B2 , IXGP30N60B4D1 , IXGP30N60C2 , IXGP30N60C3 , IXGP30N60C3C1 , IXGP30N60C3D4 , IXGP36N60A3 , IXGP42N30C3 , CRG40T60AK3HD , IXGP48N60B3 , IXGP48N60C3 , IXGP4N100 , IXGP50N60B4 , IXGP50N60C4 , IXGP7N60BD1 , IXGP7N60CD1 , IXGQ20N120B .

 

 
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