IXGR39N60B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGR39N60B
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 140 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 66 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8(max) V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 200 pF
Qgⓘ - Carga total de la puerta, typ: 125 nC
Paquete / Cubierta: ISOPLUS247
Búsqueda de reemplazo de IXGR39N60B - IGBT
IXGR39N60B Datasheet (PDF)
ixgr39n60b.pdf
VCES = 600 VIXGR 39N60BHiPerFASTTM IGBTIC25 = 66 AIXGR 39N60BD1ISOPLUS247TMVCE(sat) = 1.8 V(Electrically Isolated Backside)tfi(typ) = 200 nsPreliminary data sheet(D1)Symbol Test Conditions Maximum Ratings ISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCE Isolated Back
ixgr39n60bd1.pdf
VCES = 600 VIXGR 39N60BHiPerFASTTM IGBTIC25 = 66 AIXGR 39N60BD1ISOPLUS247TMVCE(sat) = 1.8 V(Electrically Isolated Backside)tfi(typ) = 200 nsPreliminary data sheet(D1)Symbol Test Conditions Maximum Ratings ISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCE Isolated Back
ixgr35n120b ixgr35n120c.pdf
VCES IC25 VCE(sat) tfi(typ)HiPerFASTTM IGBTIXGR 35N120B 1200 V 70 A 3.3 V 160 nsISOPLUS247TM1200 V 70 A 4.0 V 115 nsIXGR 35N120C(Electrically Isolated Backside)Symbol Test Conditions Maximum Ratings ISOPLUS 247E153432VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGVGEM Transient 30 VCE Isolated Backside*IC25
ixgr32n60cd1.pdf
VCES = 600 VHiPerFASTTM IGBT IXGR 32N60CD1IC25 = 45 Awith DiodeVCE(SAT) = 2.7 VISOPLUS247TMtfi(typ) = 55 ns(Electrically Isolated Backside)Preliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXGR)E 153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25
ixgr32n170h1.pdf
IXGR 32N170H1VCES = 1700 VHigh VoltageIC25 = 38 AIGBT with DiodeVCE(sat) = 3.5 VElectrically Isolated Tabtfi(typ) = 250 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsISOPLUS247 (IXGR)E153432VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VVGES Continuous 20 VGVGEM Transient 30 VCISOLATED TABEIC25 TC = 25C3
ixgr35n120c.pdf
VCES IC25 VCE(sat) tfi(typ)HiPerFASTTM IGBTIXGR 35N120B 1200 V 70 A 3.3 V 160 nsISOPLUS247TM1200 V 70 A 4.0 V 115 nsIXGR 35N120C(Electrically Isolated Backside)Symbol Test Conditions Maximum Ratings ISOPLUS 247E153432VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGVGEM Transient 30 VCE Isolated Backside*IC25
ixgr32n90b2d1.pdf
Advance Technical InformationVCES = 900 VIXGR 32N90B2D1HiPerFASTTM IGBTIC25 = 47 Awith Fast DiodeVCE(sat) = 2.9 Vtfi typ = 150 nsElectrically Isolated BaseSymbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR)E153432VCES TJ = 25OC to 150OC 900 VVCGR TJ = 25OC to 150OC; RGE = 1 M 900 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25OC47 A ISOLATED T
ixgr35n120b.pdf
VCES IC25 VCE(sat) tfi(typ)HiPerFASTTM IGBTIXGR 35N120B 1200 V 70 A 3.3 V 160 nsISOPLUS247TM1200 V 70 A 4.0 V 115 nsIXGR 35N120C(Electrically Isolated Backside)Symbol Test Conditions Maximum Ratings ISOPLUS 247E153432VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGVGEM Transient 30 VCE Isolated Backside*IC25
ixgr32n170ah1.pdf
Advance Technical InformationIXGR 32N170AH1VCES = 1700 VHigh VoltageIC25 = 26 AIGBT with DiodeVCE(sat) = 5.2 VElectrically Isolated Tabtfi(typ) = 50 nsSymbol Test Conditions Maximum RatingsISOPLUS247 (IXGR)E153432VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VVGES Continuous 20 VGVGEM Transient 30 VCISOLATED TABEIC25 TC
ixgr35n120bd1.pdf
Advanced Technical InformationIXGR 35N120BD1High Voltage IGBTVCES = 1200 Vwith DiodeIC25 = 54 A(Electrically Isolated Back Surface)VCE(sat) = 3.5 Vtfi(typ) = 160 nsSymbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 V(TAB)VGEM Transient 30 V GCEIC25 TC = 25
ixgr32n60c.pdf
IXGR 32N60C VCE = 600 VHiPerFASTTM IGBTIC25 = 45 ALightspeed SeriesVCE(sat) = 2.7 VISOPLUS247TM packagetfi typ = 55 ns(Electrically Isolated Back Side)Preliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCIsolated Backside*VGEM Transie
Otros transistores... IXGR24N120C3D1 , IXGR24N60C , IXGR32N170AH1 , IXGR32N170H1 , IXGR32N90B2D1 , IXGR35N120B , IXGR35N120BD1 , IXGR35N120C , MBQ40T65FDSC , IXGR39N60BD1 , IXGR40N60B , IXGR40N60B2 , IXGR40N60B2D1 , IXGR40N60C , IXGR40N60C2 , IXGR40N60C2D1 , IXGR40N60CD1 .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2