IXGR39N60B Todos los transistores

 

IXGR39N60B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGR39N60B
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 140 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 66 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Coesⓘ - Capacitancia de salida, typ: 200 pF
   Paquete / Cubierta: ISOPLUS247
     - Selección de transistores por parámetros

 

IXGR39N60B Datasheet (PDF)

 ..1. Size:511K  ixys
 ixgr39n60b.pdf pdf_icon

IXGR39N60B

VCES = 600 VIXGR 39N60BHiPerFASTTM IGBTIC25 = 66 AIXGR 39N60BD1ISOPLUS247TMVCE(sat) = 1.8 V(Electrically Isolated Backside)tfi(typ) = 200 nsPreliminary data sheet(D1)Symbol Test Conditions Maximum Ratings ISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCE Isolated Back

 0.1. Size:511K  ixys
 ixgr39n60bd1.pdf pdf_icon

IXGR39N60B

VCES = 600 VIXGR 39N60BHiPerFASTTM IGBTIC25 = 66 AIXGR 39N60BD1ISOPLUS247TMVCE(sat) = 1.8 V(Electrically Isolated Backside)tfi(typ) = 200 nsPreliminary data sheet(D1)Symbol Test Conditions Maximum Ratings ISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCE Isolated Back

 9.1. Size:49K  ixys
 ixgr35n120b ixgr35n120c.pdf pdf_icon

IXGR39N60B

VCES IC25 VCE(sat) tfi(typ)HiPerFASTTM IGBTIXGR 35N120B 1200 V 70 A 3.3 V 160 nsISOPLUS247TM1200 V 70 A 4.0 V 115 nsIXGR 35N120C(Electrically Isolated Backside)Symbol Test Conditions Maximum Ratings ISOPLUS 247E153432VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VGVGEM Transient 30 VCE Isolated Backside*IC25

 9.2. Size:569K  ixys
 ixgr32n60cd1.pdf pdf_icon

IXGR39N60B

VCES = 600 VHiPerFASTTM IGBT IXGR 32N60CD1IC25 = 45 Awith DiodeVCE(SAT) = 2.7 VISOPLUS247TMtfi(typ) = 55 ns(Electrically Isolated Backside)Preliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXGR)E 153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25

MOSTRAR MÁS

Otros transistores... IXGR24N120C3D1 , IXGR24N60C , IXGR32N170AH1 , IXGR32N170H1 , IXGR32N90B2D1 , IXGR35N120B , IXGR35N120BD1 , IXGR35N120C , FGH75T65UPD , IXGR39N60BD1 , IXGR40N60B , IXGR40N60B2 , IXGR40N60B2D1 , IXGR40N60C , IXGR40N60C2 , IXGR40N60C2D1 , IXGR40N60CD1 .

History: SPM1003 | APT15GT60KR | TT060U065FB | DM2G150SH12AE

 

 
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