IXGR40N60CD1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGR40N60CD1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 200 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 370 pF
Paquete / Cubierta: ISOPLUS247
- Selección de transistores por parámetros
IXGR40N60CD1 Datasheet (PDF)
ixgr40n60cd1.pdf
VCES = 600 VIXGR 40N60CHiPerFASTTM IGBTIC25 = 75 AIXGR 40N60CD1ISOPLUS247TMVCE(sat) = 2.7 V(Electrically Isolated Backside)tfi(typ) = 75 nsPreliminary Data Sheet(D1)Symbol Test Conditions Maximum RatingsISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCE Isolated Back
ixgr40n60c2.pdf
IXGR 40N60C2 VCES = 600 VHiPerFASTTM IGBTIXGR 40N60C2D1 IC25 = 56 AISOPLUS247TMVCE(SAT) = 2.7 VC2-Class High Speed IGBTstfi(typ = 32 ns(Electrically Isolated Back Surface)Preliminary Data SheetISOPLUS 247TM(IXGR)IXGR_C2 IXGR_C2D1Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCISOLATED TABEVCGR TJ = 25C to 150C; RGE = 1 M 600 VVG
ixgr40n60c2d1.pdf
IXGR 40N60C2 VCES = 600 VHiPerFASTTM IGBTIXGR 40N60C2D1 IC25 = 56 AISOPLUS247TMVCE(SAT) = 2.7 VC2-Class High Speed IGBTstfi(typ = 32 ns(Electrically Isolated Back Surface)Preliminary Data SheetISOPLUS 247TM(IXGR)IXGR_C2 IXGR_C2D1Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCISOLATED TABEVCGR TJ = 25C to 150C; RGE = 1 M 600 VVG
ixgr40n60c.pdf
VCES = 600 VIXGR 40N60CHiPerFASTTM IGBTIC25 = 75 AIXGR 40N60CD1ISOPLUS247TMVCE(sat) = 2.7 V(Electrically Isolated Backside)tfi(typ) = 75 nsPreliminary Data Sheet(D1)Symbol Test Conditions Maximum RatingsISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCE Isolated Back
Otros transistores... IXGR39N60B , IXGR39N60BD1 , IXGR40N60B , IXGR40N60B2 , IXGR40N60B2D1 , IXGR40N60C , IXGR40N60C2 , IXGR40N60C2D1 , IRG4PF50W , IXGR48N60B3 , IXGR48N60B3D1 , IXGR48N60C3D1 , IXGR50N160H1 , IXGR50N60A2U1 , IXGR50N60B , IXGR50N60B2 , IXGR50N60B2D1 .
History: IRG4MC40U | NCE40TD120BT | VS-GB400AH120N | FB20R06KL4 | MMG150CE065PD6TC
History: IRG4MC40U | NCE40TD120BT | VS-GB400AH120N | FB20R06KL4 | MMG150CE065PD6TC
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