IXGR50N60A2U1 Todos los transistores

 

IXGR50N60A2U1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGR50N60A2U1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 200 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 25 nS
   Coesⓘ - Capacitancia de salida, typ: 400 pF
   Paquete / Cubierta: ISOPLUS247
     - Selección de transistores por parámetros

 

IXGR50N60A2U1 Datasheet (PDF)

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IXGR50N60A2U1

Advance Technical InformationIXGR 50N60A2U1 VCES = 600 VIGBT with DiodeIC25 = 75 ALow Saturation Voltage IGBT withVCE(sat) = 1.7 VLow Forward Drop DiodeElectrically Isolated Mounting TabPreliminary Data SheetSymbol Test Conditions Maximum RatingsISOPLUS247(IXGR)E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V

 5.1. Size:514K  ixys
 ixgr50n60b2.pdf pdf_icon

IXGR50N60A2U1

IXGR 50N60B2VCES = 600 VHiPerFASTTM IGBTIXGR 50N60B2D1IC25 = 68 AISOPLUS247TMVCE(sat) = 2.2 VB2-Class High Speed IGBTstfi(typ) = 65 ns(Electrically Isolated Back Surface)Preliminary Data SheetIXGR_B2 IXGR_B2D1Symbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V (IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VG(ISOLATED TAB)VGES C

 5.2. Size:506K  ixys
 ixgr50n60c2.pdf pdf_icon

IXGR50N60A2U1

IXGR 50N60C2VCES = 600 VHiPerFASTTMIXGR 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.7 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V(IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V(ISOLATED TAB)VGEM Transient 30 VIC25 TC = 25C75 A

 5.3. Size:563K  ixys
 ixgr50n60bd1.pdf pdf_icon

IXGR50N60A2U1

VCES = 600 VIXGR 50N60BHiPerFASTTM IGBTIC25 = 75 AIXGR 50N60BD1ISOPLUS247TMVCE(sat) = 2.5 V(Electrically Isolated Back Surface)tfi(typ) = 85 ns(D1)Symbol Test Conditions Maximum RatingsISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCE Isolated Backside*IC25 TC = 25

MOSTRAR MÁS

Otros transistores... IXGR40N60C , IXGR40N60C2 , IXGR40N60C2D1 , IXGR40N60CD1 , IXGR48N60B3 , IXGR48N60B3D1 , IXGR48N60C3D1 , IXGR50N160H1 , HGTG30N60A4 , IXGR50N60B , IXGR50N60B2 , IXGR50N60B2D1 , IXGR50N60BD1 , IXGR50N60C2 , IXGR50N60C2D1 , IXGR50N90B2D1 , IXGR55N120A3H1 .

History: APT33GF120B2RD | SM2G100US60 | FGPF4565 | 4MBI400VG-060R-50 | MMG100S120B6C | IGB15N65S5

 

 
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