IXGR50N90B2D1 Todos los transistores

 

IXGR50N90B2D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGR50N90B2D1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 100 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 900 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 28 nS
   Coesⓘ - Capacitancia de salida, typ: 180 pF
   Paquete / Cubierta: ISOPLUS247
     - Selección de transistores por parámetros

 

IXGR50N90B2D1 Datasheet (PDF)

 ..1. Size:215K  ixys
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IXGR50N90B2D1

IXGR 50N90B2D1VCES = 900 VHiPerFASTTMIC25 = 40 AIXGR 50N90B2D1IGBT with FastVCE(sat) = 2.9 VDiodetfi typ = 200 nsB2-Class High Speed IGBTwith Fast Diode(Electrically Isolated Back Surface)Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR)E153432VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VVGES Continuous 20 VVGEM Transient

 7.1. Size:514K  ixys
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IXGR50N90B2D1

IXGR 50N60B2VCES = 600 VHiPerFASTTM IGBTIXGR 50N60B2D1IC25 = 68 AISOPLUS247TMVCE(sat) = 2.2 VB2-Class High Speed IGBTstfi(typ) = 65 ns(Electrically Isolated Back Surface)Preliminary Data SheetIXGR_B2 IXGR_B2D1Symbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V (IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VG(ISOLATED TAB)VGES C

 7.2. Size:506K  ixys
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IXGR50N90B2D1

IXGR 50N60C2VCES = 600 VHiPerFASTTMIXGR 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.7 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V(IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V(ISOLATED TAB)VGEM Transient 30 VIC25 TC = 25C75 A

 7.3. Size:563K  ixys
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IXGR50N90B2D1

VCES = 600 VIXGR 50N60BHiPerFASTTM IGBTIC25 = 75 AIXGR 50N60BD1ISOPLUS247TMVCE(sat) = 2.5 V(Electrically Isolated Back Surface)tfi(typ) = 85 ns(D1)Symbol Test Conditions Maximum RatingsISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCE Isolated Backside*IC25 TC = 25

Otros transistores... IXGR50N160H1 , IXGR50N60A2U1 , IXGR50N60B , IXGR50N60B2 , IXGR50N60B2D1 , IXGR50N60BD1 , IXGR50N60C2 , IXGR50N60C2D1 , FGPF4533 , IXGR55N120A3H1 , IXGR60N60B2 , IXGR60N60B2D1 , IXGR60N60C2 , IXGR60N60C2C1 , IXGR60N60C2D1 , IXGR60N60C3C1 , IXGR60N60C3D1 .

History: MMG75WD120XB6T4N | DAHF100G120SA | MMG400D120UA6TC

 

 
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