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G12N60D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: G12N60D1

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 75

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.9

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 21

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 100

Empaquetado / Estuche: TO220

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G12N60D1 Datasheet (PDF)

0.1. hgtg12n60d1d.pdf Size:46K _harris_semi

G12N60D1
G12N60D1

S E M I C O N D U C T O R HGTG12N60D1D12A, 600V N-Channel IGBTwith Anti-Parallel Ultrafast DiodeApril 1995Features PackageJEDEC STYLE TO-247 12A, 600V Latch Free OperationEMITTERCOLLECTOR Typical Fall Time

8.1. hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4d.pdf Size:173K _fairchild_semi

G12N60D1
G12N60D1

HGTG12N60A4D, HGTP12N60A4D,HGT1S12N60A4DSData Sheet December 2001600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12AThe HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9AHGT1S12N60A4DS are MOS gated high voltage switching

8.2. hgtg12n60a4 hgtp12n60a4 hgt1s12n60a4.pdf Size:207K _fairchild_semi

G12N60D1
G12N60D1

HGTP12N60A4, HGTG12N60A4,HGT1S12N60A4S9AData Sheet August 2003600V, SMPS Series N-Channel IGBTs FeaturesThe HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12AHGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9Adevices combining the best features of MOSFETs and 600V Switching SOA Capabilitybipolar transistors. These devices ha

 8.3. hgtg12n60c3d.pdf Size:120K _fairchild_semi

G12N60D1
G12N60D1

HGTG12N60C3DData Sheet December 200124A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 24A, 600V at TC = 25oCThe HGTG12N60C3D is a MOS gated high voltage switching Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oCdevice combining the best features of MOSFETs and bipolar Short Circuit Ratingtransistors. The device has t

8.4. hgtg12n60c3d .pdf Size:102K _harris_semi

G12N60D1
G12N60D1

S E M I C O N D U C T O R HGTG12N60C3D24A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeJanuary 1997Features Package 24A, 600V at TC = 25oCJEDEC STYLE TO-247 Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oCEC Short Circuit RatingG Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionThe HGTG12N60C3D is a MO

 8.5. hgtg12n60c3d.pdf Size:106K _harris_semi

G12N60D1
G12N60D1

S E M I C O N D U C T O R HGTG12N60C3D24A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeAugust 1995Features Package 24A, 600V at TC = +25oCJEDEC STYLE TO-247 Typical Fall Time - 210ns at TJ = +150oCEC Short Circuit RatingG Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionThe HGTG12N60C3D is a MOS gated high voltage swit

Otros transistores... G12N40C1D , G12N40E1 , G12N40E1D , G12N50C1 , G12N50C1D , G12N50E1 , G12N50E1D , G12N60C3D , 10N40C1D , G20N120E2 , G20N60B3 , G20N60B3D , G30N60C3 , G30N60C3D , G34N100E2 , G3N60C , G3N60C3D .

 

 
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