IXGT16N170A Todos los transistores

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IXGT16N170A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGT16N170A

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 1700V

Voltaje de saturación colector-emisor (Vce sat): 5V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 16A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación: 40

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO268

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IXGT16N170A Datasheet (PDF)

1.1. ixgt16n170ah1.pdf Size:165K _igbt_a

IXGT16N170A
IXGT16N170A

IXGH 16N170A VCES = 1700 V High Voltage IXGT 16N170A IC25 = 16 A IGBT IXGH 16N170AH1 VCE(sat) = 5.0 V IXGT 16N170AH1 tfi(typ) = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings H1 VCES TJ = 25°C to 150°C 1700 V TO-268 (IXGT) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V G E IC25 TC = 25°C16 A C (TAB) IC90 T

1.2. ixgt16n170a.pdf Size:165K _igbt_a

IXGT16N170A
IXGT16N170A

IXGH 16N170A VCES = 1700 V High Voltage IXGT 16N170A IC25 = 16 A IGBT IXGH 16N170AH1 VCE(sat) = 5.0 V IXGT 16N170AH1 tfi(typ) = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings H1 VCES TJ = 25°C to 150°C 1700 V TO-268 (IXGT) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V G E IC25 TC = 25°C16 A C (TAB) IC90 T

5.1. ixgh10n170a ixgt10n170a.pdf Size:565K _ixys

IXGT16N170A
IXGT16N170A

IXGH 10N170A VCES = 1700 V High Voltage IXGT 10N170A IC25 = 10 A IGBT VCE(sat) = 6.0 V tfi(typ) = 35 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C; RGE = 1 M? 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C10 A TO-247 AD (IXGH) IC90 TC = 90C5 A ICM TC = 25C, 1

5.2. ixgh15n120b ixgt15n120b.pdf Size:529K _ixys

IXGT16N170A
IXGT16N170A

IXGH 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C30 A TO-247 AD (IXGH) IC110 TC = 110C15 A ICM TC = 25C, 1 ms 60 A SSOA VGE = 15

5.3. ixgt15n120cd1.pdf Size:60K _igbt_a

IXGT16N170A
IXGT16N170A

Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat) High Speed IGBT with Diode IXGH/IXGT 15N120BD1 1200 V 30 A 3.2 V IXGH/IXGT 15N120CD1 1200 V 30 A 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V G VGES Continuous ±20 V C E TAB VGEM Transient ±30 V IC25 TC = 25°C30 A TO-2

5.4. ixgt10n170a.pdf Size:562K _igbt_a

IXGT16N170A
IXGT16N170A

IXGH 10N170A VCES = 1700 V High Voltage IXGT 10N170A IC25 = 10 A IGBT VCE(sat) = 6.0 V tfi(typ) = 35 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C10 A TO-247 AD (IXGH) IC90 TC = 90°C5 A ICM

5.5. ixgt15n120c.pdf Size:52K _igbt_a

IXGT16N170A
IXGT16N170A

IXGH 15N120C VCES = 1200 V IGBT IXGT 15N120C IC25 = 30 A VCE(sat) = 3.8 V Lightspeed Series tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V G VGES Continuous ±20 V E VGEM Transient ±30 V (TAB) IC25 TC = 25°C30 A IC90 TC = 90°C15 A TO-247 AD (IXGH) ICM TC =

5.6. ixgt15n120bd1.pdf Size:60K _igbt_a

IXGT16N170A
IXGT16N170A

Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat) High Speed IGBT with Diode IXGH/IXGT 15N120BD1 1200 V 30 A 3.2 V IXGH/IXGT 15N120CD1 1200 V 30 A 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V G VGES Continuous ±20 V C E TAB VGEM Transient ±30 V IC25 TC = 25°C30 A TO-2

5.7. ixgt15n120b.pdf Size:170K _igbt_a

IXGT16N170A
IXGT16N170A

IXGH 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C30 A TO-247 AD (IXGH) IC110 TC = 110°C15 A ICM TC = 25°C, 1 ms 60 A

5.8. ixgt10n170.pdf Size:187K _igbt_a

IXGT16N170A
IXGT16N170A

VCES = 1700V High Voltage IXGH10N170 IC90 = 10A IGBT IXGT10N170 ≤ VCE(sat) ≤ ≤ 4.0V ≤ ≤ TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 1700 V C C (TAB) E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V VGES Continuous ± 20 V TO-268 (IXGT) VGEM Transient ± 30 V IC25 TC = 25°C 20 A G E IC90 TC = 90°C 10 A C (TAB) ICM TC = 25°C,

5.9. ixgt15n120b2d1.pdf Size:66K _igbt_a

IXGT16N170A
IXGT16N170A

Advance Technical Information VCES =1200 V IXGH15N120B2D1 HiPerFASTTM IGBT IC25 = 30 A IXGT15N120B2D1 VCE(sat) = 3.3 V Optimized for 10-20 KHz hard tfi(typ) = 137 ns switching and up to 100 KHz resonant switching Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25°C to 150°C 1200 V (IXGH) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V G TAB C

Otros transistores... IXGR72N60A3H1 , IXGR72N60B3D1 , IXGR72N60B3H1 , IXGR72N60C3D1 , IXGT10N170 , IXGT10N170A , IXGT15N120B2D1 , IXGT16N170 , IRG4PC50UD , IXGT16N170AH1 , IXGT20N120 , IXGT20N120B , IXGT20N140C3H1 , IXGT22N170 , IXGT24N170 , IXGT24N170A , IXGT24N170AH1 .

 


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