IXGT28N120B IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGT28N120B

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 250 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.8 V @25℃

trⓘ - Tiempo de subida, typ: 20 nS

Coesⓘ - Capacitancia de salida, typ: 120 pF

Encapsulados: TO268

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IXGT28N120B datasheet

 ..1. Size:575K  ixys
ixgh28n120b ixgt28n120b.pdf pdf_icon

IXGT28N120B

IXGH 28N120B VCES = 1200 V High Voltage IGBT IXGT 28N120B IC25 = 50 A VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C50 A TO-247 AD (IXGH) IC110 TC = 110 C28 A ICM TC = 25 C, 1 ms 150 A

 ..2. Size:572K  ixys
ixgt28n120b.pdf pdf_icon

IXGT28N120B

IXGH 28N120B VCES = 1200 V High Voltage IGBT IXGT 28N120B IC25 = 50 A VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C50 A TO-247 AD (IXGH) IC110 TC = 110 C28 A ICM TC = 25 C, 1 ms 150 A

 0.1. Size:195K  ixys
ixgt28n120bd1.pdf pdf_icon

IXGT28N120B

High Voltage IGBT VCES = 1200V IXGH28N120BD1 w/ Diode IC25 = 50A IXGT28N120BD1 VCE(sat) 3.5V tfi(typ) = 170ns TO-247AD (IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V C E (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V TO-268 (IXGT) VGEM Transient 30 V IC25 TC = 25 C ( Chip Capability ) 50 A I

 7.1. Size:588K  ixys
ixgt28n60b.pdf pdf_icon

IXGT28N120B

Low VCE(sat) IGBT IXGH 28N60B VCES = 600 V IXGT 28N60B IC25 = 40 A VCE(sat) = 2.0 V Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD IC25 TC = 25 C40 A (IXGH) IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 80 A C (TAB) SSOA VGE = 15 V,

Otros transistores... IXGT20N120B, IXGT20N140C3H1, IXGT22N170, IXGT24N170, IXGT24N170A, IXGT24N170AH1, IXGT25N160, IXGT25N250, RJP63F3DPP-M0, IXGT28N120BD1, IXGT28N60BD1, IXGT2N250, IXGT30N120B3D1, IXGT30N60B, IXGT30N60B2, IXGT30N60B2D1, IXGT30N60C2