IXGT32N120A3 Todos los transistores

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IXGT32N120A3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGT32N120A3

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 1200V

Voltaje de saturación colector-emisor (Vce sat): 2.35V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 75A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO268

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IXGT32N120A3 Datasheet (PDF)

1.1. ixgt32n120a3.pdf Size:194K _igbt_a

IXGT32N120A3
IXGT32N120A3

GenX3TM 1200V VCES = 1200V IXGH32N120A3 IGBTs IC110 = 32A IXGT32N120A3 ≤ VCE(sat) ≤ ≤ 2.35V ≤ ≤ Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 1200 V E VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V C (Tab) VGES Continuous ±20 V TO-247 (IXGH) VGEM Transient ±30 V IC25 TC = 25°C 75

2.1. ixgh32n170a ixgt32n170a.pdf Size:572K _ixys

IXGT32N120A3
IXGT32N120A3

IXGH 32N170A VCES = 1700 V High Voltage IXGT 32N170A IC25 = 32 A IGBT VCE(sat) = 5.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C; RGE = 1 M? 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C32 A TO-247 AD (IXGH) IC90 TC = 90C21 A ICM TC = 25C, 1 ms 110 A SSOA VGE = 15

2.2. ixgh32n170 ixgt32n170.pdf Size:577K _ixys

IXGT32N120A3
IXGT32N120A3

High Voltage IXGH 32N170 VCES = 1700 V IXGT 32N170 IC25 = 75 A IGBT VCE(sat) = 3.3 V tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C; RGE = 1 M? 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25C75 A TO-247 AD (IXGH) IC90 TC = 90C32 A ICM TC = 25C, 1 ms

2.3. ixgt32n170.pdf Size:573K _igbt_a

IXGT32N120A3
IXGT32N120A3

High Voltage IXGH 32N170 VCES = 1700 V IXGT 32N170 IC25 = 75 A IGBT VCE(sat) = 3.3 V tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C75 A TO-247 AD (IXGH) IC90 TC = 90°C32 A ICM TC

2.4. ixgt32n100a3.pdf Size:120K _igbt_a

IXGT32N120A3
IXGT32N120A3

Advance Technical Information IXGH32N100A3 VCES = 1000V GenX3TM 1000V IGBT IXGT32N100A3 IC25 = 75A ≤ VCE(sat) ≤ ≤ 2.2V ≤ ≤ Ultra-low Vsat PT IGBTs for up to 4 kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1000 V G C (TAB) VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1000 V C E VGES Continuous ± 20 V TO-268 (

2.5. ixgt32n170a.pdf Size:569K _igbt_a

IXGT32N120A3
IXGT32N120A3

IXGH 32N170A VCES = 1700 V High Voltage IXGT 32N170A IC25 = 32 A IGBT VCE(sat) = 5.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V G VGES Continuous ±20 V E C (TAB) VGEM Transient ±30 V IC25 TC = 25°C32 A TO-247 AD (IXGH) IC90 TC = 90°C21 A ICM TC = 25°C, 1 ms 110 A

Otros transistores... IXGT30N120B3D1 , IXGT30N60B , IXGT30N60B2 , IXGT30N60B2D1 , IXGT30N60C2 , IXGT30N60C2D1 , IXGT30N60C3D1 , IXGT32N100A3 , IXGR32N60CD1 , IXGT32N170 , IXGT32N170A , IXGT32N60C , IXGT32N90B2 , IXGT32N90B2D1 , IXGT35N120B , IXGT35N120C , IXGT39N60B .

 


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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |


Introduzca al menos 1 números o letras