IXGT50N60C2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGT50N60C2

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 400 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃

trⓘ - Tiempo de subida, typ: 25 nS

Coesⓘ - Capacitancia de salida, typ: 230 pF

Encapsulados: TO268

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IXGT50N60C2 datasheet

 ..1. Size:586K  ixys
 ixgh50n60c2 ixgt50n60c2.pdf pdf_icon

IXGT50N60C2

Advance Technical Data VCES = 600 V IXGH 50N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 50N60C2 VCE(sat) = 2.7 V tfi typ = 48 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by

 ..2. Size:584K  ixys
 ixgt50n60c2.pdf pdf_icon

IXGT50N60C2

Advance Technical Data VCES = 600 V IXGH 50N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 50N60C2 VCE(sat) = 2.7 V tfi typ = 48 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by

 5.1. Size:583K  ixys
 ixgt50n60b2.pdf pdf_icon

IXGT50N60C2

VCES = 600 V IXGH 50N60B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N60B2 VCE(sat) = 2.0 V tfi typ = 65 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by leads) 75 A (IXGT) IC11

 5.2. Size:585K  ixys
 ixgh50n60b2 ixgt50n60b2.pdf pdf_icon

IXGT50N60C2

VCES = 600 V IXGH 50N60B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N60B2 VCE(sat) = 2.0 V tfi typ = 65 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by leads) 75 A (IXGT) IC11

MOSTRAR MÁS

Otros transistores... IXGT40N60B2, IXGT40N60B2D1, IXGT40N60C, IXGT40N60C2, IXGT40N60C2D1, IXGT45N120, IXGT4N250C, IXGT50N60B2, IKW30N60H3, IXGT50N90B2, IXGT60N60B2, IXGT60N60C2, IXGT60N60C3D1, IXGT64N60A3, IXGT64N60B3, IXGT6N170, IXGT6N170A