IXGX120N60A3 Todos los transistores

 

IXGX120N60A3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGX120N60A3
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 780 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 82 nS
   Coesⓘ - Capacitancia de salida, typ: 800 pF
   Qgⓘ - Carga total de la puerta, typ: 450 nC
   Paquete / Cubierta: PLUS247
     - Selección de transistores por parámetros

 

IXGX120N60A3 Datasheet (PDF)

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IXGX120N60A3

GenX3TM A3-Class IXGK120N60A3 VCES = 600VIXGX120N60A3IC110 = 120AIGBTSVCE(sat) 1.35VUltra-Low Vsat PT IGBTs forup to 5kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VG(TAB)CVGES Continuous 20 VEEVGEM Transient 30 VIC25 TC = 25C 200 APLUS 2

 4.1. Size:197K  ixys
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IXGX120N60A3

VCES = 600VGenX3TM 600V IXGK120N60B3IC110 = 120AIXGX120N60B3IGBTsVCE(sat) 1.8Vtfi(typ) = 145nsMedium-Speed-Low-Vsat PTIGBTs for 5-40kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C, RGE = 1M 600 VTabVGES Continuous 20 VVGEM Transient 30 VPLUS247TM (IXG

 4.2. Size:194K  ixys
ixgx120n60b3.pdf pdf_icon

IXGX120N60A3

VCES = 600VGenX3TM 600V IXGK120N60B3IC110 = 120AIXGX120N60B3IGBTsVCE(sat) 1.8Vtfi(typ) = 145nsMedium-Speed-Low-Vsat PTIGBTs for 5-40kHz SwitchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C, RGE = 1M 600 VTabVGES Continuous 20 VVGEM Transient 30 VPLUS247TM (IXG

 4.3. Size:925K  ixys
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IXGX120N60A3

ADVANCE TECHNICAL INFORMATIONVCES = 600 VHiPerFASTTM IGBT IXGK 120N60C2IC110 = 120 ALightspeed 2TM SeriesIXGX 120N60C2VCE(sat) = 2.5 Vtfi(typ) = 45 nsSymbol Test Conditions Maximum RatingsTO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)EIC25 TC = 25C (limited by leads)

Otros transistores... IXGT6N170 , IXGT6N170A , IXGT72N60A3 , IXGT72N60B3 , IXGV25N250S , IXGX100N170 , IXGX120N120A3 , IXGX120N120B3 , IRGB20B60PD1 , IXGX120N60B3 , IXGX120N60C2 , IXGX12N90C , IXGX28N140B3H1 , IXGX320N60A3 , IXGX320N60B3 , IXGX32N170AH1 , IXGX32N170H1 .

History: IXSH20N60U1

 

 
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