IXGX120N60B3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGX120N60B3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 780 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 280 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

trⓘ - Tiempo de subida, typ: 87 nS

Coesⓘ - Capacitancia de salida, typ: 790 pF

Encapsulados: PLUS247

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IXGX120N60B3 datasheet

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 ixgx120n60b3.pdf pdf_icon

IXGX120N60B3

VCES = 600V GenX3TM 600V IXGK120N60B3 IC110 = 120A IXGX120N60B3 IGBTs VCE(sat) 1.8V tfi(typ) = 145ns Medium-Speed-Low-Vsat PT IGBTs for 5-40kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V Tab VGES Continuous 20 V VGEM Transient 30 V PLUS247TM (IXG

 0.1. Size:197K  ixys
 ixgk120n60b3-ixgx120n60b3.pdf pdf_icon

IXGX120N60B3

VCES = 600V GenX3TM 600V IXGK120N60B3 IC110 = 120A IXGX120N60B3 IGBTs VCE(sat) 1.8V tfi(typ) = 145ns Medium-Speed-Low-Vsat PT IGBTs for 5-40kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V Tab VGES Continuous 20 V VGEM Transient 30 V PLUS247TM (IXG

 3.1. Size:601K  ixys
 ixgk120n60b ixgx120n60b.pdf pdf_icon

IXGX120N60B3

HiPerFASTTM IGBT IXGK 120N60B VCES = 600 V IXGX 120N60B IC25 = 200 A VCE(sat) = 2.1 V Symbol Test Conditions Maximum Ratings PLUS 247TM (IXGX) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGS = 1 M 600 V VCES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C 200 A TO-264 AA IC90 TC = 90 C 120 A (IXGK) IL(RMS) External lead limit 76 A ICM TC

 3.2. Size:154K  ixys
 ixgx120n60b.pdf pdf_icon

IXGX120N60B3

HiPerFASTTM IGBTs VCES = 600V IXGK120N60B IC90 = 120A IXGX120N60B VCE(sat) 2.1V TO-264 (IXGK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25 C to 150 C 600 V Tab VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V PLUS247 (IXGX) VGEM Transient 30 V IC25 TC = 25 C ( Chip Capability ) 200 A IC90 TC = 90 C 120 A ILRMS Termin

MOSTRAR MÁS

Otros transistores... IXGT6N170A, IXGT72N60A3, IXGT72N60B3, IXGV25N250S, IXGX100N170, IXGX120N120A3, IXGX120N120B3, IXGX120N60A3, RJH60F5DPQ-A0, IXGX120N60C2, IXGX12N90C, IXGX28N140B3H1, IXGX320N60A3, IXGX320N60B3, IXGX32N170AH1, IXGX32N170H1, IXGX35N120B