IXGX35N120BD1 Todos los transistores

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IXGX35N120BD1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGX35N120BD1

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 1200V

Voltaje de saturación colector-emisor (Vce sat): 3.3V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 70A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación: 160

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: PLUS247

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IXGX35N120BD1 Datasheet (PDF)

1.1. ixgk35n120b ixgk35n120bd1 ixgx35n120b ixgx35n120bd1.pdf Size:1845K _ixys

IXGX35N120BD1
IXGX35N120BD1

Preliminary Data Sheet IXGK 35N120B VCES = 1200 V HiPerFASTTM IGBT IXGX 35N120B IC25 = 70 A IXGK 35N120BD1 VCE(sat) = 3.3 V IXGX 35N120BD1 tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M? 1200 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25C70 A IC90 TC = 90C3

1.2. ixgx35n120c.pdf Size:45K _igbt_a

IXGX35N120BD1
IXGX35N120BD1

Preliminary Data Sheet IXGK 35N120C VCES = 1200 V HiPerFASTTM IGBT IXGX 35N120C IC25 = 70 A IXGK 35N120CD1 VCE(sat) = 4.0 V IXGX 35N120CD1 tfi(typ) = 115 ns (D1) Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V G C C (TAB) VGEM Transient ±30 V E IC25 TC = 25°C70 A IC9

1.3. ixgx35n120b.pdf Size:45K _igbt_a

IXGX35N120BD1
IXGX35N120BD1

Preliminary Data Sheet IXGK 35N120B VCES = 1200 V HiPerFASTTM IGBT IXGX 35N120B IC25 = 70 A IXGK 35N120BD1 VCE(sat) = 3.3 V IXGX 35N120BD1 tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V G C C (TAB) VGEM Transient ±30 V E IC25 TC = 25°C70 A IC9

1.4. ixgx35n120cd1.pdf Size:45K _igbt_a

IXGX35N120BD1
IXGX35N120BD1

Preliminary Data Sheet IXGK 35N120C VCES = 1200 V HiPerFASTTM IGBT IXGX 35N120C IC25 = 70 A IXGK 35N120CD1 VCE(sat) = 4.0 V IXGX 35N120CD1 tfi(typ) = 115 ns (D1) Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V G C C (TAB) VGEM Transient ±30 V E IC25 TC = 25°C70 A IC9

1.5. ixgx35n120bd1.pdf Size:45K _igbt_a

IXGX35N120BD1
IXGX35N120BD1

Preliminary Data Sheet IXGK 35N120B VCES = 1200 V HiPerFASTTM IGBT IXGX 35N120B IC25 = 70 A IXGK 35N120BD1 VCE(sat) = 3.3 V IXGX 35N120BD1 tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V G C C (TAB) VGEM Transient ±30 V E IC25 TC = 25°C70 A IC9

Otros transistores... IXGX120N60C2 , IXGX12N90C , IXGX28N140B3H1 , IXGX320N60A3 , IXGX320N60B3 , IXGX32N170AH1 , IXGX32N170H1 , IXGX35N120B , RJP63F3DPP-M0 , IXGX35N120C , IXGX35N120CD1 , IXGX400N30A , IXGX400N30A3 , IXGX40N60BD1 , IXGX50N120C3H1 , IXGX50N60A2D1 , IXGX50N60B2D1 .

 


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