IXGX50N60A2D1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGX50N60A2D1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 400 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.1 V @25℃

trⓘ - Tiempo de subida, typ: 25 nS

Coesⓘ - Capacitancia de salida, typ: 220 pF

Encapsulados: PLUS247

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IXGX50N60A2D1 datasheet

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IXGX50N60A2D1

Advance Technical Data IXGK50N60A2D1 VCES = 600 V IGBT with Diode IXGX 50N60A2D1 IC25 = 75 A VCE(sat) = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C VGES Continuous 20 V E VGEM Transient 30 V PLUS247 IC25 TC = 25 C (limited by leads) 75 A (IXGX) I

 3.1. Size:143K  ixys
 ixgk50n60a2u1 ixgx50n60a2u1.pdf pdf_icon

IXGX50N60A2D1

Advance Technical Information IXGK 50N60A2U1 VCES = 600 V IGBT with Diode IXGX 50N60A2U1 IC25 = 75 A VCE(sat) = 1.6 V Low Saturation Voltage IGBT with Low Forward Drop Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C E VGES Continuous 20 V VGEM Transient

 4.1. Size:136K  ixys
 ixgx50n60au1.pdf pdf_icon

IXGX50N60A2D1

Preliminary data HiPerFASTTM IXGX50N60AU1 VCES = 600 V IGBT with Diode IXGX50N60AU1S IC25 = 75 A VCE(sat) = 2.7 V Combi Pack tfi = 275 ns TO-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions Maximum Ratings C (TAB) G VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V TO-247 Hole-less (50N60AU1) VGEM Transient 30 V IC25 TC

 4.2. Size:136K  ixys
 ixgx50n60au1s.pdf pdf_icon

IXGX50N60A2D1

Preliminary data HiPerFASTTM IXGX50N60AU1 VCES = 600 V IGBT with Diode IXGX50N60AU1S IC25 = 75 A VCE(sat) = 2.7 V Combi Pack tfi = 275 ns TO-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions Maximum Ratings C (TAB) G VCES TJ = 25 C to 150 C 600 V E VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V TO-247 Hole-less (50N60AU1) VGEM Transient 30 V IC25 TC

MOSTRAR MÁS

Otros transistores... IXGX35N120B, IXGX35N120BD1, IXGX35N120C, IXGX35N120CD1, IXGX400N30A, IXGX400N30A3, IXGX40N60BD1, IXGX50N120C3H1, TGAN40N60FD, IXGX50N60B2D1, IXGX50N60BD1, IXGX50N60C2D1, IXGX50N90B2D1, IXGX55N120A3H1, IXGX60N60B2D1, IXGX60N60C2D1, IXGX64N60B3D1