IXSA10N60B2D1 Todos los transistores

 

IXSA10N60B2D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXSA10N60B2D1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 100 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Coesⓘ - Capacitancia de salida, typ: 50 pF
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

IXSA10N60B2D1 Datasheet (PDF)

 ..1. Size:589K  ixys
 ixsa10n60b2d1 ixsp10n60b2d1.pdf pdf_icon

IXSA10N60B2D1

High Speed IGBT IXSA 10N60B2D1VCES = 600 VIXSP 10N60B2D1with Diode IC25 = 20 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPreliminary Data SheetD1Symbol Test Conditions Maximum RatingsTO-263 (IXSA)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VEC (TAB)IC25 TC = 25C20 ATO-220AB (IXSP)

 ..2. Size:586K  ixys
 ixsa10n60b2d1.pdf pdf_icon

IXSA10N60B2D1

High Speed IGBT IXSA 10N60B2D1VCES = 600 VIXSP 10N60B2D1with Diode IC25 = 20 AVCE(sat) = 2.5 VShort Circuit SOA CapabilityPreliminary Data SheetD1Symbol Test Conditions Maximum RatingsTO-263 (IXSA)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VEC (TAB)IC25 TC = 25C20 ATO-220AB (IXSP)

 9.1. Size:54K  ixys
 ixsa16n60 ixsp16n60.pdf pdf_icon

IXSA10N60B2D1

Preliminary Data SheetIXSA 16N60 VCES = 600VLow VCE(sat) IGBT IXSP 16N60IC25 = 16AShort Circuit SOA CapabilityVCE(sat)typ = 1.8VTO-220AB(IXSP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGCEVGES Continuous 20 VVGEM Transient 30 VTO-263AAIC25 TC = 25C32 AIC90 TC = 90C16 AICM TC = 25

 9.2. Size:82K  ixys
 ixsa15n120b.pdf pdf_icon

IXSA10N60B2D1

Advance Technical InformationIXSA 15N120B VCES =1200 VHIGH Voltage IGBTIXSP 15N120B IC25 = 30 AVCE(sat) = 3.4 V"S" Series - Improved SCSOA CapabilityTO-220AB (IXSP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VC (TAB)GCEVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C30 ATO-263 AA (

MOSTRAR MÁS

Otros transistores... IXGX82N120A3 , IXGX82N120B3 , IXGY2N120 , IXLF19N250A , IXRA15N120 , STGWT40HP65FB , IXRH40N120 , IXRP15N120 , SGT40N60NPFDPN , IXSA15N120B , IXSA20N60B2D1 , IXSH10N60B2D1 , IXSH15N120BD1 , IXSH20N60B2D1 , IXSH24N60B , IXSH24N60BD1 , IXSH30N60B2D1 .

History: APT44GA60S | APT100GT120JU2 | IRG6I330U | HGTG27N60C3DR | AOD5B65M1

 

 
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