IXSP15N120B Todos los transistores

 

IXSP15N120B IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXSP15N120B

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 150 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3 V @25℃

trⓘ - Tiempo de subida, typ: 25 nS

Coesⓘ - Capacitancia de salida, typ: 98 pF

Encapsulados: TO220

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IXSP15N120B datasheet

 ..1. Size:82K  ixys
ixsp15n120b.pdf pdf_icon

IXSP15N120B

Advance Technical Information IXSA 15N120B VCES =1200 V HIGH Voltage IGBT IXSP 15N120B IC25 = 30 A VCE(sat) = 3.4 V "S" Series - Improved SCSOA Capability TO-220AB (IXSP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V C (TAB) G C E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C30 A TO-263 AA (

 ..2. Size:84K  ixys
ixsa15n120b ixsp15n120b.pdf pdf_icon

IXSP15N120B

Advance Technical Information IXSA 15N120B VCES =1200 V HIGH Voltage IGBT IXSP 15N120B IC25 = 30 A VCE(sat) = 3.4 V "S" Series - Improved SCSOA Capability TO-220AB (IXSP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V C (TAB) G C E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C30 A TO-263 AA (

 9.1. Size:589K  ixys
ixsa10n60b2d1 ixsp10n60b2d1.pdf pdf_icon

IXSP15N120B

High Speed IGBT IXSA 10N60B2D1 VCES = 600 V IXSP 10N60B2D1 with Diode IC25 = 20 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-263 (IXSA) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V E C (TAB) IC25 TC = 25 C20 A TO-220AB (IXSP)

 9.2. Size:54K  ixys
ixsa16n60 ixsp16n60.pdf pdf_icon

IXSP15N120B

Preliminary Data Sheet IXSA 16N60 VCES = 600V Low VCE(sat) IGBT IXSP 16N60 IC25 = 16A Short Circuit SOA Capability VCE(sat)typ = 1.8V TO-220AB(IXSP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G C E VGES Continuous 20 V VGEM Transient 30 V TO-263AA IC25 TC = 25 C32 A IC90 TC = 90 C16 A ICM TC = 25

Otros transistores... IXSH30N60B2D1 , IXSH35N120B , SIG20N60P1A , IXSH45N120B , IXSK35N120BD1 , IXSK80N60B , IXSN80N60BD1 , IXSP10N60B2D1 , SGT60N60FD1P7 , IXSP20N60B2 , IXSP20N60B2D1 , IXSP24N60B , IXSQ10N60B2D1 , SIW120N65G2P2D , IXSR35N120BD1 , IXSR40N60BD1 , IXSR40N60CD1 .

History: AFGHL40T65SQD | ATT040K065EQ

 

 

 


History: AFGHL40T65SQD | ATT040K065EQ

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