IXST15N120BD1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXST15N120BD1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 25 nS
Coesⓘ - Capacitancia de salida, typ: 120 pF
Paquete / Cubierta: TO268
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IXST15N120BD1 Datasheet (PDF)
ixsh15n120bd1 ixst15n120bd1.pdf
IXSH 15N120BD1HIGH Voltage IGBTIC25 = 30 AIXST 15N120BD1with DiodeVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.4 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C30 ATO-268 (
ixst15n120bd1.pdf
IXSH 15N120BD1HIGH Voltage IGBTIC25 = 30 AIXST 15N120BD1with DiodeVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.4 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 V(TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C30 ATO-268 (
ixsh15n120b ixst15n120b.pdf
IXSH 15N120BHIGH Voltage IGBTIC25 = 30 AIXST 15N120BVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.4 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VVGES Continuous 20 V(TAB)GVGEM Transient 30 VCEIC25 TC = 25C30 AIC90 TC = 90C15 ATO-2
ixst15n120b.pdf
IXSH 15N120BHIGH Voltage IGBTIC25 = 30 AIXST 15N120BVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 3.4 VPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD (IXSH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 MW 1200 VVGES Continuous 20 V(TAB)GVGEM Transient 30 VCEIC25 TC = 25C30 AIC90 TC = 90C15 ATO-2
Otros transistores... IXSP20N60B2 , IXSP20N60B2D1 , IXSP24N60B , IXSQ10N60B2D1 , SIW120N65G2P2D , IXSR35N120BD1 , IXSR40N60BD1 , IXSR40N60CD1 , CRG40T60AK3HD , IXST24N60B , IXST24N60BD1 , IXST30N60B2D1 , IXST35N120B , SIW100N65G2P2D , IXST45N120B , IXSX35N120BD1 , IXSX40N60BD1 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2