IXXH100N60B3 Todos los transistores

 

IXXH100N60B3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXXH100N60B3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 830 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 220 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

trⓘ - Tiempo de subida, typ: 70 nS

Coesⓘ - Capacitancia de salida, typ: 285 pF

Encapsulados: TO247

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IXXH100N60B3 datasheet

 ..1. Size:171K  ixys
 ixxh100n60b3.pdf pdf_icon

IXXH100N60B3

Preliminary Technical Information XPTTM 600V VCES = 600V IXXH100N60B3 GenX3TM IC110 = 100A VCE(sat) 1.80V tfi(typ) = 150ns Extreme Light Punch Through IGBT for 10-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G C Tab VGES Continuous 20 V E VGEM Transien

 4.1. Size:171K  ixys
 ixxh100n60c3.pdf pdf_icon

IXXH100N60B3

Advance Technical Information VCES = 600V XPTTM 600V IXXH100N60C3 IC110 = 100A GenX3TM VCE(sat) 2.20V tfi(typ) = 75ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V G VCGR TJ = 25 C to 175 C, RGE = 1M 600 V C Tab E VGES Continuous 20 V VGEM Transient 3

 9.1. Size:167K  ixys
 ixxh110n65c4.pdf pdf_icon

IXXH100N60B3

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXXH110N65C4 GenX4TM IC110 = 110A VCE(sat) 2.35V Extreme Light Punch Through tfi(typ) = 30ns IGBT for 20-60 kHz Switching Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V VGES Continuous 20 V VGEM Transient 30 V G C

 9.2. Size:231K  ixys
 ixxh150n60c3.pdf pdf_icon

IXXH100N60B3

Advance Technical Information VCES = 600V 600V XPTTM IGBT IXXH150N60C3 IC110 = 150A GenX3TM VCE(sat) 2.5V tfi(typ) = 75ns Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V VGES Co

MOSTRAR MÁS

Otros transistores... IXST30N60B2D1 , IXST35N120B , SIW100N65G2P2D , IXST45N120B , IXSX35N120BD1 , IXSX40N60BD1 , IXSX80N60B , IXXA50N60B3 , GT45F122 , IXXH100N60C3 , IXXH30N60B3D1 , IXXH30N60C3D1 , IXXH50N60B3 , IXXH50N60B3D1 , IXXH50N60C3 , IXXH50N60C3D1 , IXXH75N60B3 .

History: IXSR40N60BD1 | HIA30N140IH-DA | STGW100H65FB2-4 | SPF15N65T1T2TL | SGR5N60RUF | IXSH45N120B

 

 

 

 

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