IXXH100N60B3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXXH100N60B3 Datasheet (PDF)

..1. Size:171K ixys
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Preliminary Technical InformationXPTTM 600V VCES = 600VIXXH100N60B3GenX3TM IC110 = 100A VCE(sat) 1.80V tfi(typ) = 150nsExtreme Light Punch ThroughIGBT for 10-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGC TabVGES Continuous 20 VEVGEM Transien

4.1. Size:171K ixys
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Advance Technical InformationVCES = 600VXPTTM 600V IXXH100N60C3IC110 = 100AGenX3TM VCE(sat) 2.20V tfi(typ) = 75nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VGVCGR TJ = 25C to 175C, RGE = 1M 600 VC TabEVGES Continuous 20 VVGEM Transient 3

9.1. Size:167K ixys
ixxh110n65c4.pdf pdf_icon

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXXH110N65C4GenX4TM IC110 = 110A VCE(sat) 2.35V Extreme Light Punch Through tfi(typ) = 30nsIGBT for 20-60 kHz SwitchingSymbol Test Conditions Maximum RatingsTO-247 ADVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VVGES Continuous 20 VVGEM Transient 30 VGC

9.2. Size:231K ixys
ixxh150n60c3.pdf pdf_icon

Advance Technical InformationVCES = 600V600V XPTTM IGBT IXXH150N60C3IC110 = 150AGenX3TM VCE(sat) 2.5V tfi(typ) = 75nsExtreme Light Punch throughIGBT for 20-60kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VVGES Co

Otros transistores... IXST30N60B2D1 , IXST35N120B , SIW100N65G2P2D , IXST45N120B , IXSX35N120BD1 , IXSX40N60BD1 , IXSX80N60B , IXXA50N60B3 , GT30F131 , IXXH100N60C3 , IXXH30N60B3D1 , IXXH30N60C3D1 , IXXH50N60B3 , IXXH50N60B3D1 , IXXH50N60C3 , IXXH50N60C3D1 , IXXH75N60B3 .