IXXH30N60B3D1 Todos los transistores

 

IXXH30N60B3D1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXXH30N60B3D1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 270 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.66 V @25℃

trⓘ - Tiempo de subida, typ: 36 nS

Coesⓘ - Capacitancia de salida, typ: 137 pF

Encapsulados: TO247

 Búsqueda de reemplazo de IXXH30N60B3D1 IGBT

- Selección ⓘ de transistores por parámetros

 

IXXH30N60B3D1 datasheet

 ..1. Size:189K  ixys
 ixxh30n60b3d1.pdf pdf_icon

IXXH30N60B3D1

Advance Technical Information XPTTM 600V IGBT VCES = 600V IXXH30N60B3D1 GenX3TM w/ Diode IC110 = 30A VCE(sat) 1.85V tfi(typ) = 125ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGEM

 3.1. Size:170K  ixys
 ixxh30n60b3.pdf pdf_icon

IXXH30N60B3D1

Advance Technical Information XPTTM 600V IGBT VCES = 600V IXXH30N60B3 GenX3TM IC110 = 30A VCE(sat) 1.85V tfi(typ) = 125ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGEM Transient

 5.1. Size:190K  ixys
 ixxh30n60c3d1.pdf pdf_icon

IXXH30N60B3D1

Advance Technical Information XPTTM 600V IGBT VCES = 600V IXXH30N60C3D1 GenX3TM w/ Diode IC110 = 30A VCE(sat) 2.2V tfi(typ) = 32ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGEM

 5.2. Size:214K  ixys
 ixxh30n60c3.pdf pdf_icon

IXXH30N60B3D1

Advance Technical Information XPTTM 600V IGBT VCES = 600V IXXH30N60C3 GenX3TM IC110 = 30A VCE(sat) 2.2V tfi(typ) = 32ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G VGES Cont

MOSTRAR MÁS

Otros transistores... SIW100N65G2P2D , IXST45N120B , IXSX35N120BD1 , IXSX40N60BD1 , IXSX80N60B , IXXA50N60B3 , IXXH100N60B3 , IXXH100N60C3 , JT075N065WED , IXXH30N60C3D1 , IXXH50N60B3 , IXXH50N60B3D1 , IXXH50N60C3 , IXXH50N60C3D1 , IXXH75N60B3 , IXXH75N60B3D1 , IXXH75N60C3 .

History: F3L15R12W2H3_B27 | NCE80TD60BT | STGF15M65DF2 | IXSR35N120BD1 | IXXH100N60C3 | STGB35N35LZ | SL40T65FL

 

 

 

 

↑ Back to Top
.