IXXH75N60C3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXXH75N60C3 Datasheet (PDF)

..1. Size:167K ixys
ixxh75n60c3.pdf pdf_icon

Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH75N60C3GenX3TM IC110 = 75A VCE(sat) 2.2V tfi(typ) = 75nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM Transient

0.1. Size:186K ixys
ixxh75n60c3d1.pdf pdf_icon

Preliminary Technical InformationXPTTM 600V IGBT VCES = 600VIXXH75N60C3D1GenX3TM w/ Diode IC110 = 75A VCE(sat) 2.2V tfi(typ) = 75nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Continuous 20 VC TabEV

5.1. Size:167K ixys
ixxh75n60b3.pdf pdf_icon

Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH75N60B3GenX3TM IC110 = 75A VCE(sat) 1.85V tfi(typ) = 125nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGCVGES Continuous 20 V TabEVGEM Transient

5.2. Size:186K ixys
ixxh75n60b3d1.pdf pdf_icon

Preliminary Technical InformationXPTTM 600V IGBT VCES = 600VIXXH75N60B3D1GenX3TM w/ Diode IC110 = 75A VCE(sat) 1.85V tfi(typ) = 125nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Continuous 20 VC TabE

Otros transistores... IXXH30N60B3D1 , IXXH30N60C3D1 , IXXH50N60B3 , IXXH50N60B3D1 , IXXH50N60C3 , IXXH50N60C3D1 , IXXH75N60B3 , IXXH75N60B3D1 , RJH60F5DPQ-A0 , IXXH75N60C3D1 , IXXK100N60B3H1 , IXXK100N60C3H1 , IXXK200N60B3 , IXXK200N60C3 , IXXP50N60B3 , IXXX100N60C3H1 , IXXX200N60B3 .