IXXK100N60C3H1 Todos los transistores

 

IXXK100N60C3H1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXXK100N60C3H1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 695 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 170 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.68 V @25℃

trⓘ - Tiempo de subida, typ: 70 nS

Coesⓘ - Capacitancia de salida, typ: 455 pF

Encapsulados: TO264

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IXXK100N60C3H1 datasheet

 ..1. Size:242K  ixys
 ixxk100n60c3h1 ixxx100n60c3h1.pdf pdf_icon

IXXK100N60C3H1

Preliminary Technical Information VCES = 600V XPTTM 600V IXXK100N60C3H1 IC90 = 100A GenX3TM w/ Diode IXXX100N60C3H1 VCE(sat) 2.20V tfi(typ) = 75ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G C VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E Tab VGES Contin

 ..2. Size:240K  ixys
 ixxk100n60c3h1.pdf pdf_icon

IXXK100N60C3H1

Preliminary Technical Information VCES = 600V XPTTM 600V IXXK100N60C3H1 IC90 = 100A GenX3TM w/ Diode IXXX100N60C3H1 VCE(sat) 2.20V tfi(typ) = 75ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G C VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E Tab VGES Contin

 4.1. Size:238K  ixys
 ixxk100n60b3h1.pdf pdf_icon

IXXK100N60C3H1

VCES = 600V XPTTM 600V IXXK100N60B3H1 IC100 = 100A GenX3TM w/ Diode IXXX100N60B3H1 VCE(sat) 1.80V tfi(typ) = 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G C VGES Continuous 20 V E Tab VGEM Transient 30

 9.1. Size:313K  ixys
 ixxk110n60b4h1.pdf pdf_icon

IXXK100N60C3H1

Advance Technical Information VCES = 600V XPTTM 600V IXXK110N60B4H1 IC100 = 110A GenX4TM w/ Diode IXXX110N60B4H1 VCE(sat) 2.0V tfi(typ) = 27ns Extreme Light Punch Through IGBT for 5-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V Tab VGES Continuous

MOSTRAR MÁS

Otros transistores... IXXH50N60B3D1 , IXXH50N60C3 , IXXH50N60C3D1 , IXXH75N60B3 , IXXH75N60B3D1 , IXXH75N60C3 , IXXH75N60C3D1 , IXXK100N60B3H1 , FGH75T65UPD , IXXK200N60B3 , IXXK200N60C3 , IXXP50N60B3 , IXXX100N60C3H1 , IXXX200N60B3 , IXXX200N60C3 , IXYB82N120C3H1 , IXYH50N120C3 .

History: FPF2G120BF07AS | AOK40B65H1 | JT05N065RAD | IXXH75N60C3D1 | JT050K120F2MA1E | JT040K065WED

 

 

 

 

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