IXXK100N60C3H1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXXK100N60C3H1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 695
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 170
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.68
Tensión máxima de puerta-umbral |VGE(th)|, V: 5.5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 70
Capacitancia de salida (Cc), typ, pF: 455
Carga total de la puerta (Qg), typ, nC: 150
Paquete / Cubierta: TO264
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IXXK100N60C3H1 Datasheet (PDF)
ixxk100n60c3h1 ixxx100n60c3h1.pdf
Preliminary Technical InformationVCES = 600VXPTTM 600V IXXK100N60C3H1IC90 = 100AGenX3TM w/ Diode IXXX100N60C3H1 VCE(sat) 2.20V tfi(typ) = 75nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V GCVCGR TJ = 25C to 150C, RGE = 1M 600 VETabVGES Contin
ixxk100n60c3h1.pdf
Preliminary Technical InformationVCES = 600VXPTTM 600V IXXK100N60C3H1IC90 = 100AGenX3TM w/ Diode IXXX100N60C3H1 VCE(sat) 2.20V tfi(typ) = 75nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V GCVCGR TJ = 25C to 150C, RGE = 1M 600 VETabVGES Contin
ixxk100n60b3h1.pdf
VCES = 600VXPTTM 600V IXXK100N60B3H1IC100 = 100AGenX3TM w/ Diode IXXX100N60B3H1 VCE(sat) 1.80V tfi(typ) = 150nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGCVGES Continuous 20 VETabVGEM Transient 30
ixxk110n60b4h1.pdf
Advance Technical InformationVCES = 600VXPTTM 600V IXXK110N60B4H1IC100 = 110AGenX4TM w/ Diode IXXX110N60B4H1 VCE(sat) 2.0V tfi(typ) = 27nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C, RGE = 1M 600 VTabVGES Continuous
ixxk160n65b4.pdf
Preliminary Technical InformationVCES = 650VXPTTM 650V IGBTs IXXK160N65B4IC110 = 160AGenX4TM IXXX160N65B4 VCE(sat) 1.80V tfi(typ) = 90nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 V GCVCGR TJ = 25C to 175C, RGE = 1M 650 VETabVGES Continuous
ixxk110n65b4h1.pdf
VCES = 650VXPTTM 650V GenX4TM IXXK110N65B4H1IC110 = 110Aw/ Sonic Diode IXXX110N65B4H1 VCE(sat) 2.1V tfi(typ) = 85nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 650 VEVCGR TJ = 25C to 175C, RGE = 1M 650 VTabVGES Continuous 20 VPLUS247 (IXXX)
ixxk160n65c4.pdf
Preliminary Technical InformationVCES = 650VXPTTM 650V IGBTs IXXK160N65C4IC110 = 160AGenX4TM IXXX160N65C4 VCE(sat) 2.1V tfi(typ) = 30nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-264 (IXXK)GCSymbol Test Conditions Maximum RatingsETabVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VPLUS247 (IXXX)V
Otros transistores... IXXH50N60B3D1 , IXXH50N60C3 , IXXH50N60C3D1 , IXXH75N60B3 , IXXH75N60B3D1 , IXXH75N60C3 , IXXH75N60C3D1 , IXXK100N60B3H1 , SGT60N60FD1P7 , IXXK200N60B3 , IXXK200N60C3 , IXXP50N60B3 , IXXX100N60C3H1 , IXXX200N60B3 , IXXX200N60C3 , IXYB82N120C3H1 , IXYH50N120C3 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ