IXXX100N60C3H1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXXX100N60C3H1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 695 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 170 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.68 V @25℃
trⓘ - Tiempo de subida, typ: 70 nS
Coesⓘ - Capacitancia de salida, typ: 455 pF
Encapsulados: PLUS247
Búsqueda de reemplazo de IXXX100N60C3H1 IGBT
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IXXX100N60C3H1 datasheet
ixxk100n60c3h1 ixxx100n60c3h1.pdf
Preliminary Technical Information VCES = 600V XPTTM 600V IXXK100N60C3H1 IC90 = 100A GenX3TM w/ Diode IXXX100N60C3H1 VCE(sat) 2.20V tfi(typ) = 75ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G C VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E Tab VGES Contin
ixxx100n60c3h1.pdf
Preliminary Technical Information VCES = 600V XPTTM 600V IXXK100N60C3H1 IC90 = 100A GenX3TM w/ Diode IXXX100N60C3H1 VCE(sat) 2.20V tfi(typ) = 75ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G C VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E Tab VGES Contin
ixxx100n60b3h1.pdf
VCES = 600V XPTTM 600V IXXK100N60B3H1 IC100 = 100A GenX3TM w/ Diode IXXX100N60B3H1 VCE(sat) 1.80V tfi(typ) = 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G C VGES Continuous 20 V E Tab VGEM Transient 30
ixxx160n65c4.pdf
Preliminary Technical Information VCES = 650V XPTTM 650V IGBTs IXXK160N65C4 IC110 = 160A GenX4TM IXXX160N65C4 VCE(sat) 2.1V tfi(typ) = 30ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-264 (IXXK) G C Symbol Test Conditions Maximum Ratings E Tab VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V PLUS247 (IXXX) V
Otros transistores... IXXH75N60B3D1 , IXXH75N60C3 , IXXH75N60C3D1 , IXXK100N60B3H1 , IXXK100N60C3H1 , IXXK200N60B3 , IXXK200N60C3 , IXXP50N60B3 , IKW40T120 , IXXX200N60B3 , IXXX200N60C3 , IXYB82N120C3H1 , IXYH50N120C3 , IXYH82N120C3 , IXYN82N120C3H1 , MDI400-12E4 , MIAA10WB600TMH .
History: FGA30T65SHD | AOK40B120H1
History: FGA30T65SHD | AOK40B120H1
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