IXXX100N60C3H1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXXX100N60C3H1
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 695 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 170 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.68 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 70 nS
Coesⓘ - Capacitancia de salida, typ: 455 pF
Paquete / Cubierta: PLUS247
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IXXX100N60C3H1 Datasheet (PDF)
ixxk100n60c3h1 ixxx100n60c3h1.pdf
Preliminary Technical InformationVCES = 600VXPTTM 600V IXXK100N60C3H1IC90 = 100AGenX3TM w/ Diode IXXX100N60C3H1 VCE(sat) 2.20V tfi(typ) = 75nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V GCVCGR TJ = 25C to 150C, RGE = 1M 600 VETabVGES Contin
ixxx100n60c3h1.pdf
Preliminary Technical InformationVCES = 600VXPTTM 600V IXXK100N60C3H1IC90 = 100AGenX3TM w/ Diode IXXX100N60C3H1 VCE(sat) 2.20V tfi(typ) = 75nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V GCVCGR TJ = 25C to 150C, RGE = 1M 600 VETabVGES Contin
ixxx100n60b3h1.pdf
VCES = 600VXPTTM 600V IXXK100N60B3H1IC100 = 100AGenX3TM w/ Diode IXXX100N60B3H1 VCE(sat) 1.80V tfi(typ) = 150nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGCVGES Continuous 20 VETabVGEM Transient 30
ixxx160n65c4.pdf
Preliminary Technical InformationVCES = 650VXPTTM 650V IGBTs IXXK160N65C4IC110 = 160AGenX4TM IXXX160N65C4 VCE(sat) 2.1V tfi(typ) = 30nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-264 (IXXK)GCSymbol Test Conditions Maximum RatingsETabVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VPLUS247 (IXXX)V
ixxx160n65b4.pdf
Preliminary Technical InformationVCES = 650VXPTTM 650V IGBTs IXXK160N65B4IC110 = 160AGenX4TM IXXX160N65B4 VCE(sat) 1.80V tfi(typ) = 90nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 V GCVCGR TJ = 25C to 175C, RGE = 1M 650 VETabVGES Continuous
ixxx110n65b4h1.pdf
VCES = 650VXPTTM 650V GenX4TM IXXK110N65B4H1IC110 = 110Aw/ Sonic Diode IXXX110N65B4H1 VCE(sat) 2.1V tfi(typ) = 85nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 650 VEVCGR TJ = 25C to 175C, RGE = 1M 650 VTabVGES Continuous 20 VPLUS247 (IXXX)
ixxx110n60b4h1.pdf
Advance Technical InformationVCES = 600VXPTTM 600V IXXK110N60B4H1IC100 = 110AGenX4TM w/ Diode IXXX110N60B4H1 VCE(sat) 2.0V tfi(typ) = 27nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingTO-264 (IXXK)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCEVCGR TJ = 25C to 150C, RGE = 1M 600 VTabVGES Continuous
Otros transistores... IXXH75N60B3D1 , IXXH75N60C3 , IXXH75N60C3D1 , IXXK100N60B3H1 , IXXK100N60C3H1 , IXXK200N60B3 , IXXK200N60C3 , IXXP50N60B3 , FGH75T65UPD , IXXX200N60B3 , IXXX200N60C3 , IXYB82N120C3H1 , IXYH50N120C3 , IXYH82N120C3 , IXYN82N120C3H1 , MDI400-12E4 , MIAA10WB600TMH .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2