GA100TS60U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD -50055BGA100TS60U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesVCES = 600V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 1.6V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 100A HEXFRED antiparallel diodes with ultra- soft r

Bulletin I27119 rev. B 06/02GA100TS60SQ"HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBTFeaturesVCES = 600V Generation 4 Standard Speed IGBTTechnologyIC = 220A DC QuietIR Antiparallel diodes with FastSoft recoveryVCE(on) typ. = 1.39V Very Low Conduction Losses Industry Standard Package@ IC = 200A TJ = 25C Aluminum Nitride DBC UL approved (file E7

VS-GA100TS60SFPbFwww.vishay.comVishay SemiconductorsHalf-Bridge IGBT INT-A-PAK,(Standard Speed IGBT), 100 AFEATURES Standard speed PT IGBT technology Optimized for hard switching speed FRED Pt antiparallel diodes with fast recovery Very low conduction losses Al2O3 DBC UL approved file E78996 Designed for industrial level Material catego

GA100TS60SFPbFVishay High Power Products"Half-Bridge" IGBT INT-A-PAK(Standard Speed IGBT), 100 AFEATURES Standard speed PT IGBT technology Standard speed: DC to 1 kHz, optimized forhard switching speed FRED Pt antiparallel diodes with fast recovery Very low conduction losses Al2O3 DBC UL approved file E78996 Compliant to RoHS directive 2002/95/EC