GA100TS60U IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GA100TS60U datasheet

..1. Size:216K international rectifier
ga100ts60u.pdf pdf_icon

PD -50055B GA100TS60U Ultra-FastTM Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK Features VCES = 600V Generation 4 IGBT technology UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 1.6V kHz in resonant mode Very low conduction and switching losses @VGE = 15V, IC = 100A HEXFRED antiparallel diodes with ultra- soft r

5.1. Size:110K international rectifier
ga100ts60sq.pdf pdf_icon

Bulletin I27119 rev. B 06/02 GA100TS60SQ "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features VCES = 600V Generation 4 Standard Speed IGBT Technology IC = 220A DC QuietIR Antiparallel diodes with Fast Soft recovery VCE(on) typ. = 1.39V Very Low Conduction Losses Industry Standard Package @ IC = 200A TJ = 25 C Aluminum Nitride DBC UL approved (file E7

5.2. Size:171K vishay
vs-ga100ts60sfpbf.pdf pdf_icon

VS-GA100TS60SFPbF www.vishay.com Vishay Semiconductors Half-Bridge IGBT INT-A-PAK, (Standard Speed IGBT), 100 A FEATURES Standard speed PT IGBT technology Optimized for hard switching speed FRED Pt antiparallel diodes with fast recovery Very low conduction losses Al2O3 DBC UL approved file E78996 Designed for industrial level Material catego

6.1. Size:127K vishay
ga100ts6.pdf pdf_icon

GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK (Standard Speed IGBT), 100 A FEATURES Standard speed PT IGBT technology Standard speed DC to 1 kHz, optimized for hard switching speed FRED Pt antiparallel diodes with fast recovery Very low conduction losses Al2O3 DBC UL approved file E78996 Compliant to RoHS directive 2002/95/EC

Otros transistores... DG50H12T2Z , DG50X07T2 , DG75H12T2 , DG75X07T2L , DG75X12T2 , MSG100D350FHS , MSG100N350FH , GA100TS120U , GT60N321 , GA125TS120U , GA150TD120U , GA150TS60U , GA200SA60S , GA200SA60U , GA200TD120U , GA250TD120U , GA250TS60U .