MIXA20W1200MC Todos los transistores

 

MIXA20W1200MC IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MIXA20W1200MC

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 100 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 28 A

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

Encapsulados: MODULE

 Búsqueda de reemplazo de MIXA20W1200MC IGBT

- Selección ⓘ de transistores por parámetros

 

MIXA20W1200MC datasheet

 ..1. Size:234K  ixys
mixa20w1200mc.pdf pdf_icon

MIXA20W1200MC

MIXA20W1200MC Six-Pack VCES = 1200 V IC25 = 28 A XPT IGBT VCE(sat) = 2.1 V Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 G14 K14 C5 A1 E1 K10 C1 G10 H10 Features Application Package Easy paralleling due to the positive AC motor drives "ECO-PAC2" standard package temperature coefficient of the on-state Solar inverter Easy to mo

 3.1. Size:369K  ixys
mixa20w1200tml.pdf pdf_icon

MIXA20W1200MC

MIXA20W1200TML Six-Pack VCES = 1200 V IC25 = 28 A XPT IGBT VCE(sat) = 1.8 V Part name (Marking on product) MIXA20W1200TML 10, 23 18 22 14 8 17 21 13 11, 12 NTC 15, 16 19, 20 E72873 Pin configuration see outlines. 7 4 2 6 3 1 5 9, 24 Features Application Package High level of integration AC motor drives E1 package Rugged XPT design Pumps, Fans

 3.2. Size:316K  ixys
mixa20w1200tmh.pdf pdf_icon

MIXA20W1200MC

MIXA20W1200TMH Six-Pack VCES = 1200 V IC25 = 28 A XPT IGBT VCE(sat) = 1.8 V Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V W T2 T4 T6 NTC2 E 72873 D2 D6 D4 Pin configuration see outlines. G2 G4 G6 EU EV EW Features Application Package High level of integration - only one AC motor drives "Mini" package power semiconduct

 7.1. Size:271K  ixys
mixa20wb1200tmi.pdf pdf_icon

MIXA20W1200MC

MIXA20WB1200TMI tentative 3 Brake 3 XPT IGBT Module Rectifier Chopper Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAV = 70 A IC25 = 28 A IC25 = 28 A IFSM = 270 A VCE(sat)= 1.8 V VCE(sat) = 1.8 V 6-Pack + 3 Rectifier Bridge & Brake Unit + NTC Part number MIXA20WB1200TMI Backside isolated P P1 G1 G3 G5 T1 L1 B U L2 V W L3 T2 GB G2 G4 G6 N NB EU EV EW Features / A

Otros transistores... IGC18T120T8L , MIXA10WB1200TMH , MIXA10WB1200TML , IGC18T120T6L , MIXA150W1200TEH , IGC13T120T6L , MIXA151W1200EH , IGC54T65T8RM , IHW20N120R3 , IGC54T65R3QE , MIXA20W1200TMH , IGC50T120T8RQ , MIXA20W1200TML , IGC50T120T8RL , MIXA20WB1200TED , IGC50T120T6RL , MIXA20WB1200TMH .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 

Popular searches

bdw93c equivalent | cs7n60f | d613 transistor | fdmc8884 mosfet | k3569 mosfet equivalent | 2sa1370 | 4508nh mosfet | a94 transistor

 

 

↑ Back to Top
.