MIXA60W1200TED - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MIXA60W1200TED
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 290 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 85 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 18 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Qgⓘ - Carga total de la puerta, typ: 165 nC
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de MIXA60W1200TED - IGBT
MIXA60W1200TED Datasheet (PDF)
mixa60w1200ted.pdf
MIXA60W1200TEDSix-Pack VCES = 1200 VIC25 = 85 AXPT IGBTVCE(sat) = 1.8 VPreliminary dataPart name (Marking on product)MIXA60W1200TED15, 1625, 2615 91726 1023, 2421, 22NTC19, 20E 7287318Pin configuration see outlines.37 1148 1213, 1427, 28Features: Application: Package: Easy paralleling due to the positive AC motor drives "E2-Pa
mixa60wb1200teh.pdf
MIXA60WB1200TEHThree Phase Brake Three PhaseConverter - Brake - InverterRectifier Chopper Inverter ModuleVRRM = 1600 V VCES = 1200 V VCES = 1200 VIDAVM = 190 A IC25 = 60 A IC25 = 85 AXPT IGBTIFSM = 700 A VCE(sat) = 1.8 V VCE(sat) = 1.8 VPart name (Marking on product)MIXA60WB1200TEH21 22D7 D1 D3 D5D11 D13 D1516 18 20T1 T3 T5NTC87 15 17 191 2 3 6 5 4D6D2
mixa60wh1200teh.pdf
MIXA60WH1200TEHpreliminary3~ Brake 3~XPT IGBT ModuleRectifier Chopper InverterVRRM = 1600 V VCES = 1200 V VCES = 1200 VIDAV = 135 A IC25 = 60 A IC25 = 85 AITSM = 700A VCE(sat)= 1.8 V VCE(sat) = 1.8 V6-Pack + 3~ Rectifier Bridge, half-controlled (high-side) & Brake Unit + NTCPart numberMIXA60WH1200TEHBackside: isolated25 2624 23 2217NTC19 21107 18 20161 2
mixa60hu1200va.pdf
MIXA60HU1200VApreliminaryVCES = 1200VXPT IGBT ModuleI= 85 AC25VCE(sat) = 1.8VH~ Bridge, Buck / Boost - CombinationPart numberMIXA60HU1200VABackside: isolated6 10218 3547 9Features / Advantages: Applications: Package: V1-A-Pack Easy paralleling due to the positive temperature Switched-mode power supplies Isolation Voltage: V~3600 coefficient o
mixa600cf650tsf.pdf
MIXA600CF650TSFtentativeVCES = 650VXPT IGBT Module2xI= 720AC25VCE(sat) = 1.65 VCommon collector + free wheeling diodesPart numberMIXA600CF650TSFBackside: isolatedFeatures / Advantages: Applications: Package: SimBus F High level of integration - only one AC motor drives Isolation Voltage: V~3000 power semiconductor module required Pumps, Fans Indu
mixa600af650tsf.pdf
MIXA600AF650TSFtentativeVCES = 650VXPT IGBT Module2xI= 720AC25VCE(sat) = 1.65 VCommon emitter + free wheeling diodesPart numberMIXA600AF650TSFBackside: isolatedFeatures / Advantages: Applications: Package: SimBus F High level of integration - only one AC motor drives Isolation Voltage: V~3000 power semiconductor module required Pumps, Fans Indust
mixa600pf650tsf.pdf
MIXA600PF650TSFtentativeVCES = 2x 650VXPT IGBT ModuleI= 720AC25VCE(sat) = 1.65 VPhase leg + free wheeling Diodes + NTCPart numberMIXA600PF650TSFBackside: isolated52 1 8 7 94310/116Features / Advantages: Applications: Package: SimBus F High level of integration - only one AC motor drives Isolation Voltage: V~3000 power semiconductor module requi
Otros transistores... MIXA40W1200TED , IGC99T120T8RQ , MIXA40W1200TMH , IGC99T120T8RM , MIXA40W1200TML , IGC99T120T8RL , MIXA40WB1200TED , IGC99T120T8RH , RJH60F5DPQ-A0 , IGC99T120T6RM , MIXA60WB1200TEH , IGC99T120T6RL , MIXA61H1200ED , IGC99T120T6RH , MIXA80R1200VA , MIXA80W1200TED , IGC89T170S8RM .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2