MIXA60WB1200TEH - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MIXA60WB1200TEH
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 290 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 85 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Paquete / Cubierta: MODULE
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MIXA60WB1200TEH Datasheet (PDF)
mixa60wb1200teh.pdf
MIXA60WB1200TEHThree Phase Brake Three PhaseConverter - Brake - InverterRectifier Chopper Inverter ModuleVRRM = 1600 V VCES = 1200 V VCES = 1200 VIDAVM = 190 A IC25 = 60 A IC25 = 85 AXPT IGBTIFSM = 700 A VCE(sat) = 1.8 V VCE(sat) = 1.8 VPart name (Marking on product)MIXA60WB1200TEH21 22D7 D1 D3 D5D11 D13 D1516 18 20T1 T3 T5NTC87 15 17 191 2 3 6 5 4D6D2
mixa60w1200ted.pdf
MIXA60W1200TEDSix-Pack VCES = 1200 VIC25 = 85 AXPT IGBTVCE(sat) = 1.8 VPreliminary dataPart name (Marking on product)MIXA60W1200TED15, 1625, 2615 91726 1023, 2421, 22NTC19, 20E 7287318Pin configuration see outlines.37 1148 1213, 1427, 28Features: Application: Package: Easy paralleling due to the positive AC motor drives "E2-Pa
mixa60wh1200teh.pdf
MIXA60WH1200TEHpreliminary3~ Brake 3~XPT IGBT ModuleRectifier Chopper InverterVRRM = 1600 V VCES = 1200 V VCES = 1200 VIDAV = 135 A IC25 = 60 A IC25 = 85 AITSM = 700A VCE(sat)= 1.8 V VCE(sat) = 1.8 V6-Pack + 3~ Rectifier Bridge, half-controlled (high-side) & Brake Unit + NTCPart numberMIXA60WH1200TEHBackside: isolated25 2624 23 2217NTC19 21107 18 20161 2
Otros transistores... MIXA40W1200TMH , IGC99T120T8RM , MIXA40W1200TML , IGC99T120T8RL , MIXA40WB1200TED , IGC99T120T8RH , MIXA60W1200TED , IGC99T120T6RM , GT45F122 , IGC99T120T6RL , MIXA61H1200ED , IGC99T120T6RH , MIXA80R1200VA , MIXA80W1200TED , IGC89T170S8RM , MIXA80W1200TEH , IGC82T170S8RM .
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