IGC99T120T6RH Todos los transistores

IGC99T120T6RH IGBT4 High Power Chip FEATURES 1200V Trench + Field Stop technology This chip is used for C low V medium / high power modules CE(sat) soft turn off positive temperature coefficient Applications easy paralleling G medium / high power drives E Chip Type VCE ICn Die Size Package IGC99T120T6RH 1200V 100A 10.39 x 9.5 mm2 sawn o

IGC99T120T6RM IGBT4 Medium Power Chip FEATURES 1200V Trench + Field Stop technology This chip is used for C low switching losses medium power modules soft turn off positive temperature coefficient Applications easy paralleling G medium power drives E Chip Type VCE ICn Die Size Package IGC99T120T6RM 1200V 100A 10.39 x 9.5 mm2 sawn on foil

IGC99T120T6RL IGBT4 Low Power Chip FEATURES 1200V Trench + Field Stop technology This chip is used for C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications G low / medium power drives E Chip Type VCE ICn Die Size Package IGC99T120T6RL 1200V 100A 10.39 x 9.5 mm2 sawn on foil MECHANIC

IGC99T120T8RL IGBT4 Low Power Chip Features Recommended for 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficient Applications easy paralleling low / medium power drives Qualified according to JEDEC for target G applications E Chip Type VCE ICn1 ) Die Size Package IGC99T120T8RL 1200V 10

IGC99T120T8RH IGBT4 High Power Chip Features Recommended for 1200V Trench + Field stop technology medium / high power modules C low VCE(sat) soft turn off Applications positive temperature coefficient medium / high power drives easy paralleling G Qualified according to JEDEC for target E applications Chip Type VCE ICn1 ) Die Size Package IGC99T

IGC99T120T8RQ High Speed IGBT in Trench and Fieldstop Technology Features This chip is used for 1200V Trench & Field stop technology power modules C low switching losses positive temperature coefficient Applications easy paralleling high frequency drives G UPS E Welding Solar inverters Chip Type VCE ICn1) Die Size Package IGC99T120T8RQ 1200

IGC99T120T8RM IGBT4 Medium Power Chip Features Recommended for 1200V Trench & Field stop technology medium power modules C low switching losses soft turn off Applications positive temperature coefficient medium power drives easy paralleling G Qualified according to JEDEC for target E applications Chip Type VCE ICn1 ) Die Size Package IGC99T120T