MIXA81H1200EH Todos los transistores

 

MIXA81H1200EH IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MIXA81H1200EH

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 390 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 84 A

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

Encapsulados: MODULE

 Búsqueda de reemplazo de MIXA81H1200EH IGBT

- Selección ⓘ de transistores por parámetros

 

MIXA81H1200EH datasheet

 ..1. Size:316K  ixys
mixa81h1200eh.pdf pdf_icon

MIXA81H1200EH

MIXA81H1200EH IGBT Module VCES = 1200 V IC25 = 120 A H Bridge VCE(sat) = 1.8 V Part name (Marking on product) MIXA81H1200EH 13, 21 1 9 2 10 19 E72873 15 3 11 4 12 14, 20 Features Application Package Easy paralleling due to the positive AC motor drives "E3-Pack" standard outline temperature coefficient of the on-state Solar inverter Insulated copper base

 8.1. Size:245K  ixys
mixa81wb1200teh.pdf pdf_icon

MIXA81H1200EH

MIXA81WB1200TEH tentative 3 Brake 3 XPT IGBT Module Rectifier Chopper Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAV = 290 A IC25 = 90 A IC25 = 120 A IFSM = 1200 A VCE(sat)= 1.8 V VCE(sat) = 1.8 V 6-Pack + 3 Rectifier Bridge & Brake Unit + NTC Part number MIXA81WB1200TEH Backside isolated 30/31/32 26/27 17 7 10 13 1/2 3/4 5/6 28/29 8/9 11/12 14/15 22 20 23 18 1

 9.1. Size:376K  ixys
mixa80wb1200teh.pdf pdf_icon

MIXA81H1200EH

MIXA80WB1200TEH Three Phase Brake Three Phase Converter - Brake - Inverter Rectifier Chopper Inverter Module VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM = 265 A IC25 = 60 A IC25 = 120 A XPT IGBT IFSM = 1100 A VCE(sat) = 1.8 V VCE(sat) = 1.8 V Part name (Marking on product) MIXA80WB1200TEH 21 22 D7 D11 D13 D15 D1 D5 D3 18 16 20 T1 T5 T3 NTC 8 7 15 17 19 1 2 3 4 6 5 E

 9.2. Size:166K  ixys
mixa80r1200va.pdf pdf_icon

MIXA81H1200EH

MIXA 80R1200VA Boost / Brake Module VCES = 1200 V IC25 = 120 A XPT IGBT VCE(sat) = 2.2 V Part name (Marking on product) MIXA80R1200VA 6/7 1/2 5 4 Preliminary data 2 1 9 10 10 9 7 6 4/5 Features Application Package Isolation voltage 3600 V Power Factor Correction DCB ceramic base plate Planar passivated chips Boost Converter Easy to mount with 2

Otros transistores... IGC99T120T6RH , MIXA80R1200VA , MIXA80W1200TED , IGC89T170S8RM , MIXA80W1200TEH , IGC82T170S8RM , MIXA80WB1200TEH , IGC76T65T8RM , IRG4PC50W , IGC70T120T8RQ , MKI100-12E8 , MKI100-12F8 , MKI50-06A7 , MKI50-06A7T , MKI50-12E7 , MKI50-12F7 , MKI75-06A7 .

History: MKI100-12F8

 

 

 


History: MKI100-12F8

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 

Popular searches

tip41c replacement | b772m transistor | mj15003g datasheet | irfp460n datasheet | mj15025g | ksa1381 replacement | m3056m mosfet | skd502t mosfet

 

 

↑ Back to Top
.