MKI50-06A7 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MKI50-06A7
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 225 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 72 A
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
Encapsulados: MODULE
Búsqueda de reemplazo de MKI50-06A7 IGBT
- Selección ⓘ de transistores por parámetros
MKI50-06A7 datasheet
mki50-06a7.pdf
MKI 50-06 A7 MKI 50-06 A7T IC25 = 72 A IGBT Modules VCES = 600 V H-Bridge VCE(sat) typ. = 1.9 V Short Circuit SOA Capability Square RBSOA 13 T5 Type NTC - Option T1 D1 D5 9 1 MKI 50-06 A7 without NTC T 10 2 MKI 50-06 A7T with NTC 16 14 T2 T6 D2 D6 11 T 3 12 4 17 Features IGBTs NPT IGBT technology Symbol Conditions Maximum Ratings low saturation voltage
mki50-06a7t.pdf
MKI 50-06 A7 MKI 50-06 A7T IC25 = 72 A IGBT Modules VCES = 600 V H-Bridge VCE(sat) typ. = 1.9 V Short Circuit SOA Capability Square RBSOA 13 T5 Type NTC - Option T1 D1 D5 9 1 MKI 50-06 A7 without NTC T 10 2 MKI 50-06 A7T with NTC 16 14 T2 T6 D2 D6 11 T 3 12 4 17 Features IGBTs NPT IGBT technology Symbol Conditions Maximum Ratings low saturation voltage
mki50-12f7.pdf
Advanced Technical Information MKI 50-12F7 IC25 = 65 A IGBT Modules VCES = 1200 V H Bridge VCE(sat) typ. = 3.2 V Short Circuit SOA Capability Square RBSOA 13 1 9 2 10 16 14 11 3 4 12 17 MKI Features IGBTs Fast NPT IGBTs Symbol Conditions Maximum Ratings - low saturation voltage - positive temperature coefficient for VCES TVJ = 25 C to 150 C 1200 V easy paralleling
Otros transistores... MIXA80W1200TEH , IGC82T170S8RM , MIXA80WB1200TEH , IGC76T65T8RM , MIXA81H1200EH , IGC70T120T8RQ , MKI100-12E8 , MKI100-12F8 , TGPF30N43P , MKI50-06A7T , MKI50-12E7 , MKI50-12F7 , MKI75-06A7 , MKI75-06A7T , MKI75-12E8 , MKI80-06T6K , MMIX1G320N60B3 .
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