MKI50-06A7 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MKI50-06A7
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 225 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 72 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de MKI50-06A7 - IGBT
MKI50-06A7 Datasheet (PDF)
mki50-06a7.pdf
MKI 50-06 A7MKI 50-06 A7TIC25 = 72 AIGBT ModulesVCES = 600 VH-BridgeVCE(sat) typ. = 1.9 VShort Circuit SOA CapabilitySquare RBSOA13T5Type NTC - Option T1D1 D591MKI 50-06 A7 without NTCT102MKI 50-06 A7T with NTC1614T2 T6D2 D611T312417Features IGBTs NPT IGBT technologySymbol Conditions Maximum Ratings low saturation voltage
mki50-06a7t.pdf
MKI 50-06 A7MKI 50-06 A7TIC25 = 72 AIGBT ModulesVCES = 600 VH-BridgeVCE(sat) typ. = 1.9 VShort Circuit SOA CapabilitySquare RBSOA13T5Type NTC - Option T1D1 D591MKI 50-06 A7 without NTCT102MKI 50-06 A7T with NTC1614T2 T6D2 D611T312417Features IGBTs NPT IGBT technologySymbol Conditions Maximum Ratings low saturation voltage
mki50-12f7.pdf
Advanced Technical Information MKI 50-12F7IC25 = 65 AIGBT ModulesVCES = 1200 VH BridgeVCE(sat) typ. = 3.2 VShort Circuit SOA CapabilitySquare RBSOA131 92 1016141134 1217MKIFeatures IGBTs Fast NPT IGBTsSymbol Conditions Maximum Ratings - low saturation voltage- positive temperature coefficient forVCES TVJ = 25C to 150C 1200 Veasy paralleling
Otros transistores... MIXA80W1200TEH , IGC82T170S8RM , MIXA80WB1200TEH , IGC76T65T8RM , MIXA81H1200EH , IGC70T120T8RQ , MKI100-12E8 , MKI100-12F8 , GT30J127 , MKI50-06A7T , MKI50-12E7 , MKI50-12F7 , MKI75-06A7 , MKI75-06A7T , MKI75-12E8 , MKI80-06T6K , MMIX1G320N60B3 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2