GA250TS60U Todos los transistores

 ..1. Size:260K  international rectifier
 ga250ts60u.pdf

PD - 50047C GA250TS60U Ultra-FastTM Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK Features VCES = 600V Generation 4 IGBT technology UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 VCE(on) typ. = 1.9V kHz in resonant mode Very low conduction and switching losses @VGE = 15V, IC = 250A HEXFRED antiparallel diodes with ultra- soft

 8.1. Size:230K  international rectifier
 ga250td120u.pdf

PD - 50054A GA250TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features Generation 4 IGBT technology VCES = 1200V VCES = 1200V Standard Optimized for minimum saturation voltage and operating frequencies up to 10kHz VCE(on) typ. = 2.4V Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft recovery @VGE = 15V,

 9.1. Size:292K  vishay
 vs-ga250sa60s.pdf

VS-GA250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A FEATURES Standard optimized for minimum saturation voltage and low speed Lowest conduction losses available Fully isolated package (2500 VAC) Very low internal inductance (5 nH typical) Industry standard outline SOT-227 Designed and qualified for i