MKI75-12E8 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MKI75-12E8
Tipo de transistor: IGBT
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 130 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
Paquete / Cubierta: MODULE
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MKI75-12E8 Datasheet (PDF)
mki75-06a7t.pdf
MKI 75-06 A7MKI 75-06 A7TIC25 = 90 AIGBT ModulesVCES = 600 VH-BridgeVCE(sat) typ.= 2.1 VShort Circuit SOA CapabilitySquare RBSOA13Type: NTC - Option:T1 T5D1 D51 9MKI 75-06 A7 without NTCT2MKI 75-06 A7T with NTC 101614T6T2 D2T D6B33 1112417Features IGBTs NPT IGBT technologySymbol Conditions Maximum Ratings low saturation voltag
mki75-06a7.pdf
MKI 75-06 A7MKI 75-06 A7TIC25 = 90 AIGBT ModulesVCES = 600 VH-BridgeVCE(sat) typ.= 2.1 VShort Circuit SOA CapabilitySquare RBSOA13Type: NTC - Option:T1 T5D1 D51 9MKI 75-06 A7 without NTCT2MKI 75-06 A7T with NTC 101614T6T2 D2T D6B33 1112417Features IGBTs NPT IGBT technologySymbol Conditions Maximum Ratings low saturation voltag
Otros transistores... MKI100-12E8 , MKI100-12F8 , MKI50-06A7 , MKI50-06A7T , MKI50-12E7 , MKI50-12F7 , MKI75-06A7 , MKI75-06A7T , SGT60U65FD1PT , MKI80-06T6K , MMIX1G320N60B3 , MMIX1G75N250 , MMIX4G20N250 , MUBW100-06A8 , MUBW10-06A6K , MUBW10-06A7 , MUBW10-12A7 .
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Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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