GA400TD60U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GA400TD60U
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 400 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 335 nS
Coesⓘ - Capacitancia de salida, typ: 2509 pF
Qgⓘ - Carga total de la puerta, typ: 1806 nC
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
GA400TD60U Datasheet (PDF)
ga400td60u.pdf
PD - 50059CGA400TD60U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT DOUBLE INT-A-PAKFeaturesFeaturesFeaturesFeaturesFeaturesVCES = 600V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 1.70V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 400A HE
ga400td25s.pdf
PD -50051CGA400TD25S Standard Speed IGBT"HALF-BRIDGE" IGBT DOUBLE INT-A-PAKFeaturesFeaturesFeaturesFeaturesFeaturesVCES = 250V Generation 4 IGBT technology Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHzVCE(on) typ. = 1.3V Very low conduction and switching losses HEXFRED antiparallel diodes with ultra- soft
Otros transistores... GA150TS60U , GA200SA60S , GA200SA60U , GA200TD120U , GA250TD120U , GA250TS60U , GA300TD60U , GA400TD25S , IRG7S313U , GA500TD60U , GA50TS120U , GA600GD25S , GA75TS120U , GA75TS60U , GT10G101 , GT10J301 , GT10J311 .
History: MMG150S120B6TN | APTGF25X120E2
History: MMG150S120B6TN | APTGF25X120E2
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