MUBW50-12T8 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MUBW50-12T8
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 270 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
Encapsulados: MODULE
Búsqueda de reemplazo de MUBW50-12T8 IGBT
- Selección ⓘ de transistores por parámetros
MUBW50-12T8 datasheet
mubw50-12t8.pdf
MUBW 50-12 T8 Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 22 T1 T3 T5 D11 D13 D15 D7 D1 D3 D5 16 18 20 NTC 8 7 15 17 19 5 6 4 1 2 3 T7 T2 T4 T6 D2 D4 D12 D14 D16 D6 9 11 14 12 13 10 23 24 Three Phase Brake Three Phase Rectifier Chopper Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IFAVM = 50 A IC25 = 55 A IC25 = 80 A IFSM = 850 A VC
mubw50-12a8.pdf
MUBW 50-12 A8 Converter - Brake - Inverter Module (CBI3) 21 22 T1 D1 T5 D7 T3 D5 D3 D11 D13 D15 16 20 18 7 15 19 17 1 2 3 4 6 5 T7 T2 T4 T6 D2 E72873 D4 D6 D12 D14 D16 See outline drawing for pin arrangement 14 11 12 13 10 23 24 8 Preliminary data NTC 9 Three Phase Brake Chopper Three Phase Rectifier Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IFA
mubw50-17t8.pdf
MUBW 50-17 T8 Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 22 T1 T3 T5 D11 D13 D15 D7 D1 D3 D5 16 18 20 NTC 8 7 15 17 19 5 6 4 1 2 3 T7 T2 T4 T6 D2 D4 D12 D14 D16 D6 9 11 14 12 13 E72873 10 23 24 Three Phase Brake Three Phase Rectifier Chopper Inverter VRRM = 2200 V VCES = 1700 V VCES = 1700 V IFAVM = 60 A IC25 = 48 A IC25 = 74 A IFSM =
mubw50-06a8.pdf
MUBW 50-06 A8 Converter - Brake - Inverter Module (CBI3) 21 22 T1 D1 T5 D7 T3 D5 D3 D11 D13 D15 16 20 18 7 15 19 17 1 2 3 4 6 5 T7 T2 T4 T6 D2 D4 D6 E72873 D12 D14 D16 See outline drawing for pin arrangement 14 11 12 13 10 23 24 8 NTC 9 Three Phase Brake Chopper Three Phase Rectifier Inverter VRRM = 1600 V VCES = 600 V VCES = 600 V IFAVM = 60 A IC25 = 3
Otros transistores... MUBW35-12A8 , MUBW35-12E7 , MUBW40-12T7 , MUBW45-12T6K , MUBW50-06A7 , MUBW50-06A8 , MUBW50-12A8 , MUBW50-12E8 , GT50JR22 , MUBW50-17T8 , MUBW75-06A8 , MUBW75-12T8 , MUBW75-17T8 , MWI100-06A8 , MWI100-12A8 , MWI100-12E8 , MWI100-12T8T .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
k2837 datasheet | k389 transistor | mje15032g equivalent | nsd134 | 60r190p datasheet | cs30n20 datasheet | go42n10 | 2sa970 datasheet





