MWI100-12E8 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MWI100-12E8
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 640 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 165 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Qgⓘ - Carga total de la puerta, typ: 0.76 nC
Paquete / Cubierta: MODULE
Búsqueda de reemplazo de MWI100-12E8 - IGBT
MWI100-12E8 Datasheet (PDF)
mwi100-12e8.pdf
MWI 100-12 E8MKI 100-12 E8IC25 = 165 AIGBT ModulesVCES = 1200 VSixpack, H BridgeVCE(sat) typ. = 2.0 VShort Circuit SOA CapabilitySquare RBSOA13, 21 13, 211 5 9 1 962 10 2 1019191715157 11 113 3E728734 48 12 12See outline drawing for pin arrangement14, 2014, 20MWI MKIFeatures IGBTs NPT3 IGBTsSymbol Conditions Maximum Ratings - low sa
mwi100-12t8t.pdf
MWI100-12T8TVCES = 1200 VSix-PackIC25 = 145 ATrench IGBTVCE(sat) = 1.7 VPart name (Marking on product)MWI100-12T8T16, 17, 1830, 31, 325 91196 10227 24 21E7287328 25 22NTC29 26 23Pin configuration see outlines.2037 114 81233, 34, 35 13, 14, 15Features: Application: Package: Trench IGBT technology AC motor drives "E3-Pack" standar
mwi100-12a8.pdf
MWI 100-12 A8IC25 = 160 AIGBT ModulesVCES = 1200 VSixpackVCE(sat) typ. = 2.2 VShort Circuit SOA CapabilitySquare RBSOA13, 211 5 92 6 10191715E728733 7 11 See outline drawing for pin arrangement4 8 1214, 20Features IGBTsNPT IGBT technologySymbol Conditions Maximum Ratings low saturation voltagelow switching lossesVCES TVJ = 25C to
mwi100-06a8.pdf
MWI 100-06 A8IC25 = 130 AIGBT ModulesVCES = 600 VSixpackVCE(sat) typ. = 2.0 VShort Circuit SOA CapabilitySquare RBSOA13, 211 5 9Preliminary data2 6 101917153 7 11 E728734 8 12See outline drawing for pin arrangement14, 20Features IGBTsNPT IGBT technologySymbol Conditions Maximum Ratings low saturation voltagelow switching lossesVC
Otros transistores... MUBW50-12E8 , MUBW50-12T8 , MUBW50-17T8 , MUBW75-06A8 , MUBW75-12T8 , MUBW75-17T8 , MWI100-06A8 , MWI100-12A8 , CRG40T60AN3H , MWI100-12T8T , MWI150-06A8 , MWI150-12T8T , MWI15-12A6K , MWI15-12A7 , MWI200-06A8 , MWI225-12E9 , MWI225-17E9 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2