STGB19NC60KD Todos los transistores

 

STGB19NC60KD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGB19NC60KD
   Tipo de transistor: IGBT + Diode
   Código de marcado: GB19NC60KD
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 125 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 35 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 8 nS
   Coesⓘ - Capacitancia de salida, typ: 127 pF
   Qgⓘ - Carga total de la puerta, typ: 55 nC
   Paquete / Cubierta: D2PAK

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STGB19NC60KD Datasheet (PDF)

 ..1. Size:458K  st
stgb19nc60kd stgf19nc60kd stgp19nc60kd.pdf

STGB19NC60KD
STGB19NC60KD

STGB19NC60KDSTGF19NC60KD - STGP19NC60KD20 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility)33 Short circuit withstand time 10 s 121 IGBT co-packaged with ultra fast free-wheeling D2PAKTO-220diodeApplications321 High frequency invertersTO-220FP Mot

 ..2. Size:586K  st
stgb19nc60kd stgf19nc60kd stgp19nc60kd.pdf

STGB19NC60KD
STGB19NC60KD

STGB19NC60KDSTGF19NC60KD - STGP19NC60KD20 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility)33 Short circuit withstand time 10 s 121 IGBT co-packaged with ultra fast free-wheeling D2PAKTO-220diodeApplications321 High frequency invertersTO-220FP Mot

 0.1. Size:1330K  st
stgb19nc60kdt4 stgf19nc60kd stgp19nc60kd.pdf

STGB19NC60KD
STGB19NC60KD

STGB19NC60KDT4, STGF19NC60KD, STGP19NC60KD 20 A, 600 V short-circuit rugged IGBT Datasheet - production data Features TAB Low on voltage drop (V ) CE(sat) Low C / C ratio (no cross-conduction RES IES31susceptibility) D2 PAK3 Short-circuit withstand time 10 s 21 IGBT co-packaged with ultrafast free-TO-220FPTABwheeling diode Applications

 3.1. Size:531K  st
stgb19nc60k.pdf

STGB19NC60KD
STGB19NC60KD

STGB19NC60KSTGP19NC60K20 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s33 IGBT co-packaged with ultra fast free-wheeling 121diodeD2PAKTO-220Applications High frequency inverters Motor driversDescriptionFigure 1.

 3.2. Size:543K  st
stgb19nc60k stgp19nc60k.pdf

STGB19NC60KD
STGB19NC60KD

STGB19NC60KSTGP19NC60K20 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s33 IGBT co-packaged with ultra fast free-wheeling 121diodeD2PAKTO-220Applications High frequency inverters Motor driversDescriptionFigure 1.

Otros transistores... STGB10NC60HD , STGB10NC60K , STGB10NC60KD , STGB14NC60KD , STGB18N40LZ , STGB19NC60H , STGB19NC60HD , STGB19NC60K , GT30J127 , STGB19NC60S , STGB19NC60W , STGB20NB41LZ , STGB20NC60V , STGB30NC60K , STGB35N35LZ , STGB3NB60SD , STGB3NC120HD .

 

 
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