STGB3NC120HD Todos los transistores

STGB3NC120HD STGF3NC120HD, STGP3NC120HD 7 A, 1200 V very fast IGBT with ultrafast diode Features TAB High voltage capability High speed Very soft ultrafast recovery anti-parallel diode 3 3 2 2 1 1 Applications TO-220FP TO-220 Home appliance TAB Lighting 3 1 Description D PAK This high voltage and very fast IGBT shows an excellent trade-off between l

STGB3NC120HD STGF3NC120HD, STGP3NC120HD 7 A, 1200 V very fast IGBT with ultrafast diode Features TAB High voltage capability High speed Very soft ultrafast recovery anti-parallel diode 3 3 2 2 1 1 Applications TO-220FP TO-220 Home appliance TAB Lighting 3 1 Description D PAK This high voltage and very fast IGBT shows an excellent trade-off between l

STGB3NB60SD N-CHANNEL 3A - 600V D2PAK Power MESH IGBT TYPE VCES VCE(sat) Ic STGB3NB60SD 600 V

STGB35N35LZ STGP35N35LZ EAS 450 mJ, 345 V, internally clamped IGBT Features TAB Low threshold voltage TAB Low on-voltage drop High voltage clamping feature 3 1 Gate and gate-emitter integrated resistors TAB D PAK 3 2 1 I PAK Application Automotive ignition 3 2 1 TO-220 Description This application specific IGBT utilizes the most advanced PowerMES

STGB30NC60K STGP30NC60K 30 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s 3 3 2 Applications 1 1 D PAK TO-220 High frequency inverters Motor drivers Description This IGBT utilizes the advanced PowerMESH process resulting in an

STGB35N35LZ STGP35N35LZ EAS 450 mJ, 345 V, internally clamped IGBT Features TAB Low threshold voltage TAB Low on-voltage drop High voltage clamping feature 3 1 Gate and gate-emitter integrated resistors TAB D PAK 3 2 1 I PAK Application Automotive ignition 3 2 1 TO-220 Description This application specific IGBT utilizes the most advanced PowerMES

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TAB Features TAB Maximum junction temperature TJ = 175 C Tail-less switching off 3 3 2 1 VCE(sat) = 1.85 V (typ.) @ IC = 30 A 1 D PAK TO-220 Tight parameters distribution TAB Safe paralleling Low therma

STGB30NC60K STGP30NC60K 30 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s 3 3 2 Applications 1 1 D PAK TO-220 High frequency inverters Motor drivers Description This IGBT utilizes the advanced PowerMESH process resulting in an

STGB30V60F, STGP30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C TAB Tail-less switching off TAB VCE(sat) = 1.85 V (typ.) @ IC = 30 A Tight parameters distribution Safe paralleling 3 3 1 2 1 Low thermal resistance D2PAK TO-220 Applications Ph

STGB30H60DF STGP30H60DF 30 A, 600 V field stop trench gate IGBT with Ultrafast diode Target specification Features Very high speed switching Tight parameters distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time 3 3 2 1 1 Ultrafast soft recovery antiparallel diode TO-220 Applications D PAK Motor control Description

STGB3HF60HD, STGD3HF60HDT4, STGF3HF60HD, STGP3HF60HD 4.5 A, 600 V very fast IGBT with Ultrafast diode Datasheet - production data Features Minimal tail current Low conduction and switching losses Ultrafast soft recovery antiparallel diode Applications Motor drive Description These devices are based on a new advanced planar technology concept to yield an I

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TAB Features TAB Maximum junction temperature TJ = 175 C Tail-less switching off 3 3 2 1 VCE(sat) = 1.85 V (typ.) @ IC = 30 A 1 D PAK TO-220 Tight parameters distribution TAB Safe paralleling Low therma

STGB30H60DLFB, STGW30H60DLFB Trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data Features Designed for soft commutation only Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current 3 1 3 VCE(sat) = 1.55 V (typ.) @ IC = 30 A 2 D2PAK 1 Low VF soft recovery co-packaged diode T

STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB High speed switching Tight parameters distribution 3 1 3 Safe paralleling 2 1 D PAK Low thermal resistance TO-220FP Short circuit rated TAB Ultrafast soft recovery antiparallel diode Applications 3 3 I

STGB30H60DFB, STGP30H60DFB Datasheet Trench gate field-stop 600 V, 30 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C TAB TAB High speed switching series Minimized tail current 3 Low saturation voltage VCE(sat) = 1.55 V (typ.) @ IC = 30 A 1 3 2 D PAK TO-220 2 Tight parameter distribution 1 Safe paralleling Positive V

STGB30H60DLFB, STGW30H60DLFB Trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data Features Designed for soft commutation only Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current 3 1 3 VCE(sat) = 1.55 V (typ.) @ IC = 30 A 2 D2PAK 1 Low VF soft recovery co-packaged diode T