STGB6NC60HD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGB6NC60HD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 56 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
trⓘ - Tiempo de subida, typ: 5 nS
Coesⓘ - Capacitancia de salida, typ: 32 pF
Encapsulados: D2PAK
Búsqueda de reemplazo de STGB6NC60HD IGBT
- Selección ⓘ de transistores por parámetros
STGB6NC60HD datasheet
stgb6nc60hd.pdf
STGB6NC60HD - STGB6NC60HD-1 STGF6NC60HD - STGP6NC60HD N-channel 600V - 7A - I2PAK / D2PAK / TO-220 / TO-220FP Very fast PowerMESH IGBT Features IC VCE(sat)max Type VCES @25 C @100 C STGB6NC60HD 600V
stgb6nc60hd-1 stgp6nc60hd stgf6nc60hd.pdf
STGB6NC60HD - STGB6NC60HD-1 STGF6NC60HD - STGP6NC60HD N-channel 600V - 7A - I2PAK / D2PAK / TO-220 / TO-220FP Very fast PowerMESH IGBT Features IC VCE(sat)max Type VCES @25 C @100 C STGB6NC60HD 600V
stgb6nc60hdt4 stgf6nc60hd stgp6nc60hd.pdf
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD Datasheet N-channel 600 V, 7 A, very fast IGBT Features TAB Low VCE(sat) 3 1 2 Low CRES/CIES ratio (no cross-conduction susceptibility) D PAK 3 2 1 Very soft ultra fast recovery antiparallel diode TO-220FP TAB High-frequency operation 3 2 1 Applications TO-220 High-frequency inverters C(2, TAB) SMPS and PFC
stgb6nc60h.pdf
STGB6NC60H N-channel 600V - 7A - D2PAK Very fast PowerMESH IGBT General features IC VCE(sat)max Type VCES @25 C @100 C STGB6NC60H 600V
Otros transistores... STGB19NC60S , STGB19NC60W , STGB20NB41LZ , STGB20NC60V , STGB30NC60K , STGB35N35LZ , STGB3NB60SD , STGB3NC120HD , FGL60N100BNTD , STGB7NC60HD , STGB8NC60K , STGB8NC60KD , STGBL6NC60D , STGBL6NC60DI , STGD10HF60KD , STGD10NC60H , STGD10NC60HD .
History: SKM150GB174D
History: SKM150GB174D
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
bc547 transistor equivalent | 2sa1943 | tip41c datasheet | mje15032 | tip32c datasheet | mje15032g | irf1404 | bc550