STGB8NC60K IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGB8NC60K
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 65 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
trⓘ - Tiempo de subida, typ: 6 nS
Coesⓘ - Capacitancia de salida, typ: 46 pF
Encapsulados: D2PAK
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STGB8NC60K datasheet
stgb8nc60kd stgd8nc60kd stgf8nc60kd stgp8nc60kd.pdf
STGB8NC60KD - STGD8NC60KD STGF8NC60KD - STGP8NC60KD 600 V - 8 A - short circuit rugged IGBT Features 2 Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 susceptibility) 3 2 DPAK 1 Very soft ultra fast recovery antiparallel diode TO-220 Short circuit withstand time 10 s 2 Applications High frequency motor controls 3 3 2
stgb8nc60kd.pdf
STGB8NC60KD - STGD8NC60KD STGF8NC60KD - STGP8NC60KD 600 V - 8 A - short circuit rugged IGBT Features 2 Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 susceptibility) 3 2 DPAK 1 Very soft ultra fast recovery antiparallel diode TO-220 Short circuit withstand time 10 s 2 Applications High frequency motor controls 3 3 2
Otros transistores... STGB20NB41LZ , STGB20NC60V , STGB30NC60K , STGB35N35LZ , STGB3NB60SD , STGB3NC120HD , STGB6NC60HD , STGB7NC60HD , CRG75T65AK5HD , STGB8NC60KD , STGBL6NC60D , STGBL6NC60DI , STGD10HF60KD , STGD10NC60H , STGD10NC60HD , STGD10NC60KD , STGD10NC60S .
History: JT05N065SED | JT05N065FED | NCE40TD120WT | BG200B12UY3-I | JT075K120F2MA1E | MPBW25N120B | NCE40TD120BT
History: JT05N065SED | JT05N065FED | NCE40TD120WT | BG200B12UY3-I | JT075K120F2MA1E | MPBW25N120B | NCE40TD120BT
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