STGE50NC60WD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGE50NC60WD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 260 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
trⓘ - Tiempo de subida, typ: 17 nS
Coesⓘ - Capacitancia de salida, typ: 410 pF
Encapsulados: ISOTOP
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STGE50NC60WD datasheet
stge50nc60wd.pdf
STGE50NC60WD N-channel 50A - 600V - ISOTOP Ultra fast switching PowerMESH IGBT Features VCE(sat) (Max) IC Type VCES @25 C @100 C STGE50NC60WD 600V 2.5V 50A High current capability High frequency operation Low CRES/CIES ratio (no cross-conduction ISOTOP susceptibility Very soft ultra fast recovery antiparallel diode Description Using the latest high voltage
stge50nc60vd.pdf
STGE50NC60VD 50 A - 600 V very fast IGBT Features High current capability High frequency operation Low CRES/CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Applications ISOTOP High frequency inverters SMPS and PFC in both hard switching and resonant topologies UPS Motor drivers Figure 1. Internal s
stge50nb60hd.pdf
STGE50NB60HD N-CHANNEL 50A - 600V - ISOTOP PowerMESH IGBT TYPE VCES VCE(sat) IC STGY50NB60HD 600 V
Otros transistores... STGD7NB60S , STGD7NC60H , STGD8NC60K , STGD8NC60KD , STGDL6NC60D , STGDL6NC60DI , STGE200NB60S , STGE50NC60VD , FGH40N60SFD , STGF10NB60SD , STGF10NC60HD , STGF10NC60KD , STGF10NC60SD , STGF14NC60KD , STGF19NC60HD , STGF19NC60KD , STGF19NC60SD .
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