STGP10NC60S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STGP10NC60S
   Tipo de transistor: IGBT + Diode
   Código de marcado: GP10NC60S
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

   Pcⓘ - Máxima potencia disipada: 62.5 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 21 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.75 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 4 nS
   Coesⓘ - Capacitancia de salida, typ: 44 pF
   Qgⓘ - Carga total de la puerta, typ: 18 nC
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de STGP10NC60S - IGBT

STGP10NC60S Datasheet (PDF)

..1. Size:1260K st
stgp10nc60s.pdf

STGD10NC60SSTGP10NC60S10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switchingTAB Low on-voltage drop (VCE(sat))TABApplication3321 1 Motor driveDPAK TO-220DescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low

..2. Size:252K st
stgd10nc60s stgp10nc60s.pdf

STGD10NC60SSTGP10NC60S10 A - 600 V fast IGBTFeatures Very low on-voltage drop (VCE(sat)) Minimum power losses at 5 kHz in hard switching Optimized performance for medium operating frequencies33211ApplicationDPAK TO-220 Medium frequency motor controlDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of

4.1. Size:607K st
stgb10nc60kd stgd10nc60kd stgf10nc60kd stgp10nc60kd.pdf

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

4.2. Size:326K st
stgp10nc60h.pdf

STGP10NC60HN-channel 10A - 600V - TO-220Very fast PowerMESH IGBTFeaturesVCE(sat) IC VCESType(Max)@ 25C @100CSTGP10NC60H 600V

4.3. Size:767K st
stgp10nc60hd.pdf

STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant

4.4. Size:608K st
stgb10nc60k stgp10nc60k stgd10nc60k.pdf

STGB10NC60K - STGD10NC60KSTGP10NC60KN-channel 600V - 10A - D2PAK / TO-220 / DPAKShort circuit rated PowerMESH IGBTGeneral featuresICVCE(sat)MaxType VCES@25C @100CSTGB10NC60K 600V

4.5. Size:1653K st
stgb10nc60kdt4 stgd10nc60kdt4 stgf10nc60kd stgp10nc60kd.pdf

STGB10NC60KDT4, STGD10NC60KDT4, STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Datasheet - production data Features Lower on voltage drop (V ) CE(sat) Lower C / C ratio (no cross-conduction RES IESsusceptibility) Very soft ultra fast recovery antiparallel diode Short-circuit withstand time 10 s Applications High frequency motor

4.6. Size:605K st
stgp10nc60kd.pdf