STGP10NC60S Todos los transistores

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STGP10NC60S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGP10NC60S

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 62.5W

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat): 1.45V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 5A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO220

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STGP10NC60S Datasheet (PDF)

1.1. stgb10nc60k stgp10nc60k stgd10nc60k.pdf Size:608K _st

STGP10NC60S
STGP10NC60S

STGB10NC60K - STGD10NC60K STGP10NC60K N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH IGBT General features IC VCE(sat)Max Type VCES @25C @100C STGB10NC60K 600V <2.5V 10A 3 STGP10NC60K 600V <2.5V 10A 1 3 2 STGD10NC60K 600v <2.5V 10A 1 D?PAK TO-220 Lower on voltage drop (Vcesat) 3 Lower CRES / CIES ratio (no cross-conduction 1 susceptibility)

1.2. stgb10nc60kd stgd10nc60kd stgf10nc60kd stgp10nc60kd.pdf Size:607K _st

STGP10NC60S
STGP10NC60S

STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features TAB TAB Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 3 1 susceptibility) DPAK Very soft ultra fast recovery antiparallel diode D2PAK TAB Short-circuit withstand time 10s Description This IGBT utilizes the advanced PowerMESH 3 3 2

1.3. stgb10nc60hd stgd10nc60hd stgf10nc60hd stgp10nc60hd.pdf Size:768K _st

STGP10NC60S
STGP10NC60S

STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBT Features 2 Low on-voltage drop (VCE(sat)) 3 Low CRES / CIES ratio (no cross-conduction 3 1 1 susceptibility) D?PAK DPAK Very soft ultra fast recovery antiparallel diode Applications High frequency motor controls 3 3 2 2 SMPS and PFC in both hard switch and 1 1 resonant topologies TO

1.4. stgp10nc60h.pdf Size:326K _st

STGP10NC60S
STGP10NC60S

STGP10NC60H N-channel 10A - 600V - TO-220 Very fast PowerMESH IGBT Features VCE(sat) IC VCES Type (Max)@ 25C @100C STGP10NC60H 600V < 2.5V 10A Low on-voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction 3 2 susceptibility) 1 TO-220 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an adva

1.5. stgd10nc60s stgp10nc60s.pdf Size:252K _st

STGP10NC60S
STGP10NC60S

STGD10NC60S STGP10NC60S 10 A - 600 V fast IGBT Features Very low on-voltage drop (VCE(sat)) Minimum power losses at 5 kHz in hard switching Optimized performance for medium operating frequencies 3 3 2 1 1 Application DPAK TO-220 Medium frequency motor control Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between s

1.6. stgp10nc60s.pdf Size:1260K _igbt

STGP10NC60S
STGP10NC60S

STGD10NC60S STGP10NC60S 10 A, 600 V fast IGBT Features ■ Optimized performance for medium operating frequencies up to 5 kHz in hard switching TAB ■ Low on-voltage drop (VCE(sat)) TAB Application 3 3 2 1 1 ■ Motor drive DPAK TO-220 Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low

1.7. stgp10nc60hd.pdf Size:767K _igbt

STGP10NC60S
STGP10NC60S

STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBT Features 2 ■ Low on-voltage drop (VCE(sat)) 3 ■ Low CRES / CIES ratio (no cross-conduction 3 1 1 susceptibility) D²PAK DPAK ■ Very soft ultra fast recovery antiparallel diode Applications ■ High frequency motor controls 3 3 2 2 ■ SMPS and PFC in both hard switch and 1 1 resonant

1.8. stgp10nc60kd.pdf Size:605K _igbt

STGP10NC60S
STGP10NC60S

STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features TAB TAB ■ Lower on voltage drop (VCE(sat)) 3 ■ Lower CRES / CIES ratio (no cross-conduction 1 3 1 susceptibility) DPAK ■ Very soft ultra fast recovery antiparallel diode D2PAK TAB ■ Short-circuit withstand time 10µs Description This IGBT utilizes the advanced PowerM

Otros transistores... STGF8NC60KD , STGFL6NC60D , STGFL6NC60DI , STGP10NB37LZ , STGP10NB60S , STGP10NB60SD , STGP10NC60HD , STGP10NC60KD , IRGP4068D , STGP14NC60KD , STGP18N40LZ , STGP19NC60HD , STGP19NC60KD , STGP19NC60S , STGP19NC60SD , STGP19NC60W , STGP19NC60WD .

 


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